Invention Application
- Patent Title: Method and apparatus of generating PDMAT precursor
- Patent Title (中): 生成PDMAT前体的方法和装置
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Application No.: US10447255Application Date: 2003-05-27
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Publication No.: US20040014320A1Publication Date: 2004-01-22
- Inventor: Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: null
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: null
- Main IPC: B01J010/00
- IPC: B01J010/00 ; B01J010/02 ; B01J012/00 ; B01J012/02 ; B01J014/00 ; B01J015/00 ; B01J016/00 ; B01J019/00 ; B32B027/04 ; B32B027/12 ; H01L021/302 ; H01L021/461 ; B32B005/02
Abstract:
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.
Public/Granted literature
- US06905541B2 Method and apparatus of generating PDMAT precursor Public/Granted day:2005-06-14
Information query
