发明申请
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10864518申请日： 2004-06-10
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公开(公告)号： US20050001265A1公开(公告)日： 2005-01-06
- 发明人: Satoshi Shiraki , Yoshiaki Nakayama , Shoji Mizuno , Takashi Nakano , Akira Yamada
- 申请人： Satoshi Shiraki , Yoshiaki Nakayama , Shoji Mizuno , Takashi Nakano , Akira Yamada
- 优先权： JP2003-170019 20030613; JP2004-61077 20040304
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/336 ; H01L21/763 ; H01L21/8234 ; H01L27/08 ; H01L29/10 ; H01L29/423 ; H01L29/78 ; H01L29/786 ; H01L29/76
摘要：
A semiconductor device includes: a semiconductor substrate with a principal plane; a base region disposed on the principal plane; a source region disposed on the principal plane in the base region to be shallower than the base region; a drain region disposed on the principal plane, and spaced to the base region; a trench disposed on the principal plane; a trench gate electrode disposed in the trench through a trench gate insulation film; a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film; and an impurity diffusion region having high concentration of impurities and disposed in a portion of the base region to be a channel region facing the planer gate electrode.
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IPC分类:
