发明申请
- 专利标题： Semiconductor device manufacturing method
- 专利标题（中）： 半导体器件制造方法
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申请号： US10486446申请日： 2003-06-20
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公开(公告)号： US20050014359A1公开(公告)日： 2005-01-20
- 发明人: Yuji Segawa , Takeshi Nogami , Hiroshi Horikoshi , Naoki Komai
- 申请人： Yuji Segawa , Takeshi Nogami , Hiroshi Horikoshi , Naoki Komai
- 优先权： JP20021-84873 20020625
- 国际申请： PCT/JP03/07871 WO 20030620
- 主分类号： C23C18/16
- IPC分类号： C23C18/16 ; C23C18/18 ; C23C18/31 ; C23C18/50 ; C25D3/12 ; C25D3/58 ; C25D7/12 ; H01L21/02 ; H01L21/285 ; H01L21/288 ; H01L21/306 ; H01L21/321 ; H01L21/768 ; H01L23/532 ; H01L21/4763 ; H01L21/44
摘要：
A method of manufacturing a semiconductor device for realizing a semiconductor device which is suitable for enhancing the operating speed thereof and which is high in quality and reliability is provided. The method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device including a barrier film (7) having a copper diffusion preventive function and formed on a copper-containing metallic wire (9), the method including the steps of: conducting electroplating by use of an electroplating liquid containing a catalyst metal (10) added thereto so as thereby to form the metallic wiring (2) containing the catalyst metal (10); and conducting electroless plating by use of the catalyst metal (10) exposed at the surface of the metallic wiring (2) as a catalyst so as thereby to form the barrier film (7) having the copper diffusion preventive function on the metallic wiring (2).
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