发明申请
- 专利标题： Method of forming an insulating structure having an insulating interlayer and a capping layer and method of forming a metal wiring structure using the same
- 专利标题（中）： 形成具有绝缘中间层和覆盖层的绝缘结构的方法和使用其形成金属布线结构的方法
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申请号： US10899934申请日： 2004-07-27
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公开(公告)号： US20050026422A1公开(公告)日： 2005-02-03
- 发明人: Yoon-Hae Kim , Kyung-Tae Lee , Yong-Jun Lee
- 申请人： Yoon-Hae Kim , Kyung-Tae Lee , Yong-Jun Lee
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR03-52008 20030728
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/312 ; H01L21/316 ; H01L21/768 ; H01L21/336 ; H01L21/4763 ; H01L21/31 ; H01L21/469
摘要：
In a method of forming an insulating structure, an insulating interlayer is formed on a substrate using a silicon source gas and a reaction gas. A capping layer is formed in-situ on the insulating interlayer by increasing a flow rate of an oxidizing gas included in the reaction gas so that the capping layer has a second thickness when the insulating interlayer is formed on the substrate to have a first thickness. The insulating structure dose not have an interface between the insulating interlayer and the capping layer so that the insulating interlayer is not subject to damage by a cleaning solution during a subsequent cleaning process, since the cleaning solution maynot permeate into the insulating structure. Additionally, leakage current is mitigated or eliminated between the insulating interlayer and the capping layer, thereby improving the reliability of a semiconductor device including the insulating structure.
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