发明申请
US20050026444A1 Slurry and method for chemical-mechanical planarization of copper
审中-公开
铜的化学机械平面化的浆料和方法
- 专利标题： Slurry and method for chemical-mechanical planarization of copper
- 专利标题（中）： 铜的化学机械平面化的浆料和方法
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申请号： US10846718申请日： 2004-05-13
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公开(公告)号： US20050026444A1公开(公告)日： 2005-02-03
- 发明人: S. Babu , Sharath Hegde , Sunil Jha , Udaya Patri , Youngki Hong
- 申请人： S. Babu , Sharath Hegde , Sunil Jha , Udaya Patri , Youngki Hong
- 主分类号： C09G1/02
- IPC分类号： C09G1/02 ; C09K3/14 ; C23F3/06 ; H01L21/321 ; H01L21/302 ; H01L21/311 ; H01L21/461
摘要：
The claimed invention involves a novel aqueous slurry for chemical-mechanical planarization that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO3 dissolved in an oxidizing agent. A method for polishing copper by chemical-mechanical planarization includes contacting copper with a polishing pad and an aqueous slurry comprising particles of MoO3 dissolved in an oxidizing agent.
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