发明申请
- 专利标题： Laser oscillation apparatus, exposure apparatus, semiconductor device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
- 专利标题（中）： 激光振荡装置，曝光装置，半导体装置的制造方法，半导体制造厂和曝光装置维护方法
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申请号： US10930745申请日： 2004-09-01
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公开(公告)号： US20050030987A1公开(公告)日： 2005-02-10
- 发明人: Yoshiyuki Nagai , Naoto Sano
- 申请人： Yoshiyuki Nagai , Naoto Sano
- 申请人地址： JP Tokyo
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2000-126502 20000426
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H01L21/027 ; H01S3/104 ; H01S3/1055 ; H01S3/106 ; H01S3/136 ; H01S3/225 ; H01S5/022 ; H01S5/06 ; H01S5/062 ; H01S5/40 ; H01S3/13
摘要：
A laser oscillation apparatus includes a wavelength change unit for driving a wavelength selection element in a band-narrowing module and changing the oscillation wavelength of a laser beam to a target value, and an oscillation history memory for storing the oscillation state of the laser beam as an oscillation history. The wavelength change unit drives the wavelength selection element on the basis of the oscillation history and changes the oscillation wavelength of the laser beam to the target value.
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