- 专利标题： Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
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申请号： US10882362申请日： 2004-07-02
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公开(公告)号： US20050037693A1公开(公告)日： 2005-02-17
- 发明人: Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
- 申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： JSR Corporation,KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： JSR Corporation,KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo JP Tokyo
- 优先权： JP2003-191766 20030704
- 主分类号： C09G1/02
- IPC分类号： C09G1/02 ; C09K3/14 ; H01L21/02 ; H01L21/321 ; B24B1/00
摘要：
A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.
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