发明申请
US20050040385A1 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
有权
非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件
- 专利标题： Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
- 专利标题（中）： 非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件
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申请号： US10413690申请日： 2003-04-15
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公开(公告)号： US20050040385A1公开(公告)日： 2005-02-24
- 发明人: Michael Craven , Stacia Keller , Steven Denbaars , Tal Margalith , James Speck , Shuji Nakamura , Umesh Mishra
- 申请人： Michael Craven , Stacia Keller , Steven Denbaars , Tal Margalith , James Speck , Shuji Nakamura , Umesh Mishra
- 主分类号： C23C16/04
- IPC分类号： C23C16/04 ; C30B25/02 ; C30B25/04 ; C30B25/10 ; C30B25/18 ; C30B29/38 ; C30B29/40 ; C30B29/60 ; H01L21/205 ; H01S5/343 ; H01L31/072
摘要：
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
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