发明申请
- 专利标题： Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
- 专利标题（中）： 用于屏障应用的气密低介电常数层的双层方法
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申请号： US10888110申请日： 2004-07-09
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公开(公告)号： US20050042889A1公开(公告)日： 2005-02-24
- 发明人: Albert Lee , Annamalai Lakshmanan , Bok Kim , Li-Qun Xia , Mei-Yee Shek
- 申请人： Albert Lee , Annamalai Lakshmanan , Bok Kim , Li-Qun Xia , Mei-Yee Shek
- 主分类号： C23C16/30
- IPC分类号： C23C16/30 ; C23C16/40 ; C23C16/56 ; H01L21/311 ; H01L21/312 ; H01L21/316 ; H01L21/768 ; H01L21/31 ; H01L21/336 ; H01L21/469
摘要：
Methods and apparatus are provided for processing a substrate with a bilayer barrier layer. In one aspect, the invention provides a method for processing a substrate including depositing a nitrogen containing barrier layer on a substrate surface and then depositing a nitrogen free barrier layer thereon. The barrier layer may be deposited over dielectric materials, conductive materials, or both. The bilayer barrier layer may also be used as an etch stop, an anti-reflective coating, or a passivation layer.
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