发明申请
- 专利标题： Method to improve copper electrochemical deposition
- 专利标题（中）： 改善铜电化学沉积的方法
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申请号： US10654523申请日： 2003-09-03
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公开(公告)号： US20050045485A1公开(公告)日： 2005-03-03
- 发明人: Chien-Hsueh Shih , Ting-Chu Ko , Minghsing Tsai
- 申请人： Chien-Hsueh Shih , Ting-Chu Ko , Minghsing Tsai
- 专利权人： Taiwan Semiconductor Manufacturing Co. Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co. Ltd.
- 主分类号： C25D3/38
- IPC分类号： C25D3/38 ; C25D5/10 ; C25D7/12 ; C25D15/00 ; H01L21/288 ; H01L21/768 ; H05K3/42 ; C25D5/02 ; H01L21/445
摘要：
A method for reducing or avoiding copper layer pitting in a copper electrochemical deposition process to improve deposition uniformity including providing a substrate for carrying out at least a first copper electroplating process; providing a copper electroplating solution including a deforming (antiforming) agent wherein the antiforming (deforming) agent includes at least one alkylene monomer; and, carrying out at least a first copper electroplating process to deposit at least a first copper layer.
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