发明申请
- 专利标题： Enhanced gate structure
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申请号： US10652350申请日： 2003-08-29
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公开(公告)号： US20050045961A1公开(公告)日： 2005-03-03
- 发明人: John Barnak , Mark Doczy , Robert Chau , Collin Borla
- 申请人： John Barnak , Mark Doczy , Robert Chau , Collin Borla
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/51 ; H01L29/76
摘要：
A technique for producing an enhanced gate structure having a silicon-nitride buffer. Embodiments relate to the structure and development of a gate structure having a silicon-nitride buffer layer deposited upon a dielectric layer, upon which a gate material, such as polysilicon, is deposited.
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