发明申请
- 专利标题： Magnetic memory with write inhibit selection and the writing method for same
- 专利标题（中）： 具有写禁止选择的磁存储器及其写入方法
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申请号： US10490490申请日： 2002-09-19
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公开(公告)号： US20050047206A1公开(公告)日： 2005-03-03
- 发明人: Jean-Pierre Nozieres , Laurent Ranno , Yann Conraux
- 申请人： Jean-Pierre Nozieres , Laurent Ranno , Yann Conraux
- 优先权： FR01/12123 20010920
- 国际申请： PCT/FR02/03209 WO 20020919
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/16 ; H01F10/13 ; H01F10/16 ; H01F10/32 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; H01L43/10 ; G11C11/34
摘要：
The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.