公开(公告)号：US07332781B2

公开(公告)日：2008-02-19

申请号：US10490491

申请日：2002-09-19

Applicant: Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

Inventor： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

IPC: H01L29/82 ,  H01L43/00

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226

Abstract: The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.

Abstract translation: 本发明涉及一种磁存储器，其中每个存储点由磁性隧道结（60）组成，包括：被称为俘获层（61）的磁性层，其中磁化是刚性的; 称为自由层（63）的磁性层，其磁化可以是反向的; 和绝缘层（62），介于所述自由层（73）和所述被俘获层（71）之间并分别与所述两层接触。 自由层（63）由基于稀土或过渡金属的无定形或纳米碳化合金制成，所述合金的磁顺序为铁磁型，所述自由层具有基本上平面的磁化强度。

公开(公告)号：US20050047206A1

公开(公告)日：2005-03-03

申请号：US10490490

申请日：2002-09-19

Applicant: Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

Inventor： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

IPC: G11C11/15 ,  G11C11/16 ,  H01F10/13 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  G11C11/34

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268

Abstract: The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.

Abstract translation: 本发明涉及具有写禁止选择的磁存储器及其写入方法。 本发明的每个存储元件都包括一个磁性隧道结（70），它由以下组成：被称为被俘获层（71）的磁性层，具有硬磁化; 被称为自由层（73）的磁性层，其磁化可以颠倒; 以及设置在所述自由层（73）和所述被捕获层（71）之间并且与所述两个层接触的绝缘层（72）。 自由层（73）由基于稀土和过渡金属的无定形或纳米晶体合金制成，所述合金的磁顺序为亚铁磁型。 本发明存储器的选定工作温度接近合金的补偿温度。

公开(公告)号：US20050040433A1

公开(公告)日：2005-02-24

申请号：US10490491

申请日：2002-09-19

Applicant: Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

Inventor： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

IPC: G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L31/072

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226

Abstract: The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.

Abstract translation: 本发明涉及一种磁存储器，其中每个存储点由磁性隧道结（60）组成，包括：被称为俘获层（61）的磁性层，其中磁化是刚性的; 称为自由层（63）的磁性层，其磁化可以是反向的; 和绝缘层（62），介于所述自由层（73）和所述被俘获层（71）之间并分别与所述两层接触。 自由层（63）由基于稀土或过渡金属的无定形或纳米碳化合金制成，所述合金的磁顺序为铁磁型，所述自由层具有基本上平面的磁化强度。

公开(公告)号：US07129555B2

公开(公告)日：2006-10-31

申请号：US10490490

申请日：2002-09-19

Applicant: Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

Inventor： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

IPC: H01L29/82 ,  H01L43/00

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268

Abstract: The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.

Abstract translation: 本发明涉及具有写禁止选择的磁存储器及其写入方法。 本发明的每个存储元件都包括一个磁性隧道结（70），它由以下组成：被称为被俘获层（71）的磁性层，具有硬磁化; 被称为自由层（73）的磁性层，其磁化可以颠倒; 以及设置在所述自由层（73）和所述被捕获层（71）之间并且与所述两个层接触的绝缘层（72）。 自由层（73）由基于稀土和过渡金属的无定形或纳米晶体合金制成，所述合金的磁顺序为亚铁磁型。 本发明存储器的选定工作温度接近合金的补偿温度。

公开(公告)号：US07791917B2

公开(公告)日：2010-09-07

申请号：US12348830

申请日：2009-01-05

Applicant: Jean-Pierre Nozieres ,  Virgile Javerliac

Inventor： Jean-Pierre Nozieres ,  Virgile Javerliac

IPC: G11C15/02

CPC classification number: G11C15/046 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/02

Abstract: A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.

Abstract translation: 一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。 磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。 在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。 用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。 数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。 由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。 内存可以支持高速，降低功耗和数据屏蔽。

公开(公告)号：US07518897B2

公开(公告)日：2009-04-14

申请号：US11869632

申请日：2007-10-09

Applicant: Jean-Pierre Nozieres ,  Virgile Javerliac

Inventor： Jean-Pierre Nozieres ,  Virgile Javerliac

IPC: G11C15/02

CPC classification number: G11C15/046 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/02

Abstract: A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.

Abstract translation: 一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。 磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。 在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。 用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。 数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。 由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。 内存可以支持高速，降低功耗和数据屏蔽。

公开(公告)号：US20080247072A1

公开(公告)日：2008-10-09

申请号：US12059869

申请日：2008-03-31

Applicant: Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

Inventor： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

IPC: G11B5/02

CPC classification number: G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10S977/933 ,  Y10S977/935

Abstract: This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell; one so-called “free” magnetic storage layer, the magnetization direction of which is variable; one insulating layer sandwiched between the reference layer and the storage layer. The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

Abstract translation: 这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向 的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。 由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。

公开(公告)号：US06650496B2

公开(公告)日：2003-11-18

申请号：US09858225

申请日：2001-05-15

Applicant: Jean-Pierre Nozieres ,  O. Girard ,  E. Saporito ,  L. Chiesi ,  Joern Raastad

Inventor： Jean-Pierre Nozieres ,  O. Girard ,  E. Saporito ,  L. Chiesi ,  Joern Raastad

IPC: G11B1512

CPC classification number: G11B5/3183 ,  G11B5/17 ,  G11B5/29 ,  G11B5/295 ,  G11B5/3103 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/4976

Abstract: A matrix array of recording heads, wherein each head is independent from another both in terms of its magnetic circuit and excitation conductors. Each individual head has a planar magnetic circuit and an helical coil wrapped around the lower part of the magnetic circuit. The matrix array is collectively fabricated using full thin film technology on non-magnetic substrates. Preferably, the heads are aligned in an oblique lattice with the write gaps aligned along rows and offset by a constant value along columns. Each individual head is connected to the control electronics through interconnects to the backside of the wafer, allowing independent control of the write parameters. The die forming the device is shaped on its edges and top surface to optimize head/medium positioning and minimize wear.

Abstract translation: 一种记录头的矩阵阵列，其中在其磁路和激励导体方面，每个磁头独立于另一磁头。 每个单独的头具有平面磁路和缠绕在磁路下部的螺旋线圈。 在非磁性基板上使用全部薄膜技术集合地制作矩阵阵列。 优选地，头部以倾斜格架排列，其中写入间隙沿着行排列并沿着列偏移恒定值。 每个单独的头通过互连连接到控制电子器件到晶片的背面，允许对写入参数的独立控制。 形成设备的模具在其边缘和顶部表面上成形，以优化头部/中间定位并使磨损最小化。

公开(公告)号：US07894228B2

公开(公告)日：2011-02-22

申请号：US12422752

申请日：2009-04-13

Applicant: Jean-Pierre Nozieres ,  Virgile Javerliac

Inventor： Jean-Pierre Nozieres ,  Virgile Javerliac

IPC: G11C15/02

CPC classification number: G11C15/046 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/02

Abstract: A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.

Abstract translation: 一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。 磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。 在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。 用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。 数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。 由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。 内存可以支持高速，降低功耗和数据屏蔽。

公开(公告)号：US20110007561A1

公开(公告)日：2011-01-13

申请号：US12832472

申请日：2010-07-08

Applicant: Neal Berger ,  Jean-Pierre Nozieres

Inventor： Neal Berger ,  Jean-Pierre Nozieres

IPC: G11C11/14 ,  G11C7/00

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1673

Abstract: The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.

Abstract translation: 本公开涉及一种磁性随机存取存储单元，其包含由包括感测层和存储层之间的绝缘层形成的磁性隧道结。 本公开还涉及一种用于写入和读取存储单元的方法，包括在写入操作期间切换所述存储层的磁化方向以将数据写入所述存储层，并且在读取操作期间，对准所述感测层的磁化方向 在第一对准方向上，并且通过测量所述磁性隧道结的第一电阻值来比较所述写入数据与所述第一对准方向。 所公开的存储单元和方法允许以低功耗和增加的速度执行写入和读取操作。