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1.发明授权Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same 有权磁存储器采用自旋极化电流写入，采用非晶铁磁性合金，书写方法相同公开(公告)号：US07332781B2
公开(公告)日：2008-02-19
申请号：US10490491
申请日：2002-09-19
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , H01F10/3204 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L27/226
摘要： The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.
摘要翻译： 本发明涉及一种磁存储器，其中每个存储点由磁性隧道结（60）组成，包括：被称为俘获层（61）的磁性层，其中磁化是刚性的; 称为自由层（63）的磁性层，其磁化可以是反向的; 和绝缘层（62），介于所述自由层（73）和所述被俘获层（71）之间并分别与所述两层接触。 自由层（63）由基于稀土或过渡金属的无定形或纳米碳化合金制成，所述合金的磁顺序为铁磁型，所述自由层具有基本上平面的磁化强度。
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2.发明授权公开(公告)号：US07129555B2
公开(公告)日：2006-10-31
申请号：US10490490
申请日：2002-09-19
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3204 , H01F10/3268
摘要： The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.
摘要翻译： 本发明涉及具有写禁止选择的磁存储器及其写入方法。 本发明的每个存储元件都包括一个磁性隧道结（70），它由以下组成：被称为被俘获层（71）的磁性层，具有硬磁化; 被称为自由层（73）的磁性层，其磁化可以颠倒; 以及设置在所述自由层（73）和所述被捕获层（71）之间并且与所述两个层接触的绝缘层（72）。 自由层（73）由基于稀土和过渡金属的无定形或纳米晶体合金制成，所述合金的磁顺序为亚铁磁型。 本发明存储器的选定工作温度接近合金的补偿温度。
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3.发明申请公开(公告)号：US20050047206A1
公开(公告)日：2005-03-03
申请号：US10490490
申请日：2002-09-19
IPC分类号： G11C11/15 , G11C11/16 , H01F10/13 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , G11C11/34
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3204 , H01F10/3268
摘要： The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.
摘要翻译： 本发明涉及具有写禁止选择的磁存储器及其写入方法。 本发明的每个存储元件都包括一个磁性隧道结（70），它由以下组成：被称为被俘获层（71）的磁性层，具有硬磁化; 被称为自由层（73）的磁性层，其磁化可以颠倒; 以及设置在所述自由层（73）和所述被捕获层（71）之间并且与所述两个层接触的绝缘层（72）。 自由层（73）由基于稀土和过渡金属的无定形或纳米晶体合金制成，所述合金的磁顺序为亚铁磁型。 本发明存储器的选定工作温度接近合金的补偿温度。
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4.发明申请Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same 有权磁存储器采用自旋极化电流写入，采用非晶铁磁性合金，书写方法相同公开(公告)号：US20050040433A1
公开(公告)日：2005-02-24
申请号：US10490491
申请日：2002-09-19
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L31/072
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , H01F10/3204 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L27/226
摘要： The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.
摘要翻译： 本发明涉及一种磁存储器，其中每个存储点由磁性隧道结（60）组成，包括：被称为俘获层（61）的磁性层，其中磁化是刚性的; 称为自由层（63）的磁性层，其磁化可以是反向的; 和绝缘层（62），介于所述自由层（73）和所述被俘获层（71）之间并分别与所述两层接触。 自由层（63）由基于稀土或过渡金属的无定形或纳米碳化合金制成，所述合金的磁顺序为铁磁型，所述自由层具有基本上平面的磁化强度。
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