发明申请
- 专利标题： Reduction of feature critical dimensions
- 专利标题（中）： 减少功能关键尺寸
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申请号： US10648953申请日： 2003-08-26
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公开(公告)号： US20050048785A1公开(公告)日： 2005-03-03
- 发明人: Sean Kang , Sangheon Lee , Wan-Lin Chen , Eric Hudson , S. Sadjadi , Gan Zhao
- 申请人： Sean Kang , Sangheon Lee , Wan-Lin Chen , Eric Hudson , S. Sadjadi , Gan Zhao
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/311 ; H01L21/768 ; H01L21/302 ; H01L21/461 ; H01L33/00
摘要：
A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
公开/授权文献
- US07250371B2 Reduction of feature critical dimensions 公开/授权日：2007-07-31
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