公开(公告)号：US20090184089A1

公开(公告)日：2009-07-23

申请号：US12338950

申请日：2008-12-18

Applicant: Robert CHEBI ,  Frank LIN ,  Jaroslaw W. WINNICZEK ,  Wan-Lin CHEN ,  Erin MCDONNELL ,  Lily ZHENG ,  Stephan LASSIG ,  Jeff BOGART ,  Camelia RUSU

Inventor： Robert CHEBI ,  Frank LIN ,  Jaroslaw W. WINNICZEK ,  Wan-Lin CHEN ,  Erin MCDONNELL ,  Lily ZHENG ,  Stephan LASSIG ,  Jeff BOGART ,  Camelia RUSU

IPC: B44C1/22 ,  C23F1/08

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract translation: 提供了将特征蚀刻成具有稳态气流的硅层的方法。 提供了包含含氧气体和含氟气体的蚀刻气体。 从蚀刻气体提供等离子体。 然后，停止蚀刻气体的流动。

公开(公告)号：US07192531B1

公开(公告)日：2007-03-20

申请号：US10603412

申请日：2003-06-24

Applicant: Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  Reza Sadjadi

Inventor： Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  Reza Sadjadi

IPC: H01L21/302

CPC classification number: H01L21/76808 ,  H01L21/31138

Abstract: A method for forming damascene features in a dielectric layer over a barrier layer over a substrate is provided. A plurality of vias are etched in the dielectric layer to the barrier layer with a plasma etching process in the plasma processing chamber. A patterned photoresist layer is formed with a trench pattern. Within a single plasma process chamber a combination via plug deposition to form plugs in the vias over the barrier layer and trench etch is provided.

Abstract translation: 提供了一种用于在衬底上的阻挡层上的介电层中形成镶嵌特征的方法。 在等离子体处理室中通过等离子体蚀刻工艺将多个通孔在电介质层中蚀刻到阻挡层。 形成具有沟槽图案的图案化的光致抗蚀剂层。 在单个等离子体处理室内，提供了通过插塞沉积的组合以在阻挡层上的通孔中形成插塞和沟槽蚀刻。

公开(公告)号：US07022611B1

公开(公告)日：2006-04-04

申请号：US10426043

申请日：2003-04-28

Applicant: Douglas L. Keil ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Mark H. Wilcoxson ,  Andrew D. Bailey, III

Inventor： Douglas L. Keil ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Mark H. Wilcoxson ,  Andrew D. Bailey, III

IPC: H01L21/302

CPC classification number: H01L21/0273

Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.

Abstract translation: 提供了通过在晶片上蚀刻层来制造半导体器件的方法。 在晶片上设置光致抗蚀剂层。 对光致抗蚀剂层进行图案化。 将晶片放置在处理室中。 通过在处理室中提供含有高能电子的硬化等离子体使光致抗蚀剂硬化，使光致抗蚀剂层硬化，其中高能电子具有密度。 该层在处理室内用蚀刻等离子体蚀刻，其中蚀刻等离子体中高能电子的密度小于硬化等离子体中高能电子的密度。

公开(公告)号：US07347915B1

公开(公告)日：2008-03-25

申请号：US11326934

申请日：2006-01-05

Applicant: Douglas L. Keil ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Mark H. Wilcoxson ,  Andrew D. Bailey, III

Inventor： Douglas L. Keil ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Mark H. Wilcoxson ,  Andrew D. Bailey, III

IPC: H01L21/00

CPC classification number: H01L21/0273

Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.

Abstract translation: 提供了通过在晶片上蚀刻层来制造半导体器件的方法。 在晶片上设置光致抗蚀剂层。 对光致抗蚀剂层进行图案化。 将晶片放置在处理室中。 通过在处理室中提供含有高能电子的硬化等离子体使光致抗蚀剂硬化，使光致抗蚀剂层硬化，其中高能电子具有密度。 该层在处理室内用蚀刻等离子体蚀刻，其中蚀刻等离子体中高能电子的密度小于硬化等离子体中高能电子的密度。

公开(公告)号：US07250371B2

公开(公告)日：2007-07-31

申请号：US10648953

申请日：2003-08-26

Applicant: Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Gan Ming Zhao

Inventor： Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Gan Ming Zhao

IPC: H01L21/311

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

Abstract translation: 提供了一个图层中的一个特征。 在该层上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。 在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。 将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

公开(公告)号：US5734032A

公开(公告)日：1998-03-31

申请号：US581314

申请日：1995-12-29

Applicant: Jih Ru Hwu ,  Shwu-Chen Tsay ,  Buh-Luen Chen ,  Himatkumar V. Patel ,  Wan-Lin Chen ,  Chun Chieh Lin ,  Ching-Tai Chou

Inventor： Jih Ru Hwu ,  Shwu-Chen Tsay ,  Buh-Luen Chen ,  Himatkumar V. Patel ,  Wan-Lin Chen ,  Chun Chieh Lin ,  Ching-Tai Chou

IPC: C07H21/00 ,  C12N15/10 ,  C12Q1/68 ,  C01B21/14

CPC classification number: C07H21/00 ,  C12N15/10 ,  C12Q1/68

Abstract: The present invention discloses a photo-induced DNA-cleaving agent composition comprises N-aryl-N-(alkyl or arylalkyl)hydroxylamine having the following formula: ##STR1## wherein R is C.sub.1 -C.sub.6 alkyl, phenyl, C.sub.1 -C.sub.6 alkoxy, phenoxy, C.sub.1 -C.sub.6 alkoxycarbonyl, halogen or halo(C.sub.1 -C.sub.6 alkyl)wherein R.sub.1 is hydrogen, C.sub.1 -C.sub.6 alkyl, phenyl, C.sub.1 -C.sub.6 alkoxy, C.sub.1 -C.sub.6 alkoxycarbonyl, halogen or halo(C.sub.1 -C.sub.6 alkyl); R.sub.2 is hydrogen; R.sub.3 is hydrogen or phenyl; R.sub.4 is hydrogen, phenyl, hydroxylphenyl, methoxyphenyl, dimethoxyphenyl, dimethylaminophenyl or naphthyl. The present N-aryl-N-(alkyl or arylalkyl)hydroxylamine is stable in dark, but it can react with O.sub.2 to form HO.multidot. radicals under irradiation of UV light for a period of 2-3 hours. The HO.multidot. radicals then react with DNA to accomplish cleavage of DNA.

Abstract translation: 本发明公开了一种光致DNA切割剂组合物，其包含具有下式的N-芳基-N-（烷基或芳烷基）羟胺：其中R是C1-C6烷基，苯基，C1-C6 烷氧基，苯氧基，C1-C6烷氧基羰基，卤素或卤素（C1-C6烷基），其中R1是氢，C1-C6烷基，苯基，C1-C6烷氧基，C1-C6烷氧基羰基，卤素或卤素（C1-C6烷基） R2是氢; R3是氢或苯基; R4是氢，苯基，羟基苯基，甲氧基苯基，二甲氧基苯基，二甲基氨基苯基或萘基。 本发明的N-芳基-N-（烷基或芳基烷基）羟胺在黑暗中稳定，但在紫外线照射下可与O 2反应形成HOx自由基2-3小时。 然后，HOx自由基与DNA反应以完成DNA的切割。

公开(公告)号：US20130280627A1

公开(公告)日：2013-10-24

申请号：US13862491

申请日：2013-04-15

Applicant: Po-Kuei Chou ,  Tsai-Hsin Cheng ,  Din-Sun Ju ,  Wan-Lin Chen

Inventor： Po-Kuei Chou ,  Tsai-Hsin Cheng ,  Din-Sun Ju ,  Wan-Lin Chen

IPC: H01M8/06

CPC classification number: H01M8/0662 ,  C01B3/56 ,  C01B2203/02 ,  C01B2203/042 ,  C01B2203/0495 ,  C01B2203/066 ,  C01B2203/146 ,  H01M8/0687

Abstract: A hydrogen-purifying device is suitable for a fuel cell (FC). The hydrogen-purifying device includes a guiding tank, a first water-absorbing material, a porous filter material and a second water-absorbing material. The guiding tank is connected to a hydrogen-generating device and a fuel cell. The hydrogen-generating device generates hydrogen, moisture mixed with the hydrogen and impurities mixed with the hydrogen. The first water-absorbing material, the porous filter material and the second water-absorbing material are disposed in the guiding tank. The hydrogen passes through the first water-absorbing material to remove a part of the moisture. Then, the hydrogen further passes through the porous filter material to remove the impurity. After that, the hydrogen further passes through the second water-absorbing material to remove another part of the moisture and arrives at the fuel cell.

Abstract translation: 氢气净化装置适用于燃料电池（FC）。 氢净化装置包括引导槽，第一吸水材料，多孔过滤材料和第二吸水材料。 引导箱连接到氢气发生装置和燃料电池。 氢产生装置产生氢，与氢混合的水分和与氢混合的杂质。 第一吸水材料，多孔过滤材料和第二吸水材料设置在引导槽中。 氢气通过第一吸水材料以除去一部分水分。 然后，氢气进一步通过多孔过滤材料以除去杂质。 此后，氢气进一步通过第二吸水材料以除去另一部分水分并到达燃料电池。

公开(公告)号：US20050048785A1

公开(公告)日：2005-03-03

申请号：US10648953

申请日：2003-08-26

Applicant: Sean Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric Hudson ,  S. Sadjadi ,  Gan Zhao

Inventor： Sean Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric Hudson ,  S. Sadjadi ,  Gan Zhao

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461 ,  H01L33/00

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

Abstract translation: 提供了一个图层中的一个特征。 在该层上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。 在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。 将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

公开(公告)号：US09330926B2

公开(公告)日：2016-05-03

申请号：US12338950

申请日：2008-12-18

Applicant: Robert Chebi ,  Frank Lin ,  Jaroslaw W. Winniczek ,  Wan-Lin Chen ,  Erin McDonnell ,  Lily Zheng ,  Stephan Lassig ,  Jeff Bogart ,  Camelia Rusu

Inventor： Robert Chebi ,  Frank Lin ,  Jaroslaw W. Winniczek ,  Wan-Lin Chen ,  Erin McDonnell ,  Lily Zheng ,  Stephan Lassig ,  Jeff Bogart ,  Camelia Rusu

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract translation: 提供了将特征蚀刻成具有稳态气流的硅层的方法。 提供了包含含氧气体和含氟气体的蚀刻气体。 从蚀刻气体提供等离子体。 然后，停止蚀刻气体的流动。

公开(公告)号：US07541291B2

公开(公告)日：2009-06-02

申请号：US11821422

申请日：2007-06-22

Applicant: Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Gan Ming Zhao

Inventor： Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Gan Ming Zhao

IPC: H01L21/302

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

Abstract translation: 提供了一个图层中的一个特征。 在该层上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。 在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。 将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。