发明申请
- 专利标题： Semiconductor device manufacturing method
- 专利标题（中）： 半导体器件制造方法
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申请号： US10941814申请日： 2004-09-16
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公开(公告)号： US20050064667A1公开(公告)日： 2005-03-24
- 发明人: Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
- 申请人： Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 优先权： JP2003-327660 20030919
- 主分类号： H01L21/318
- IPC分类号： H01L21/318 ; H01L21/00 ; H01L21/28 ; H01L21/314 ; H01L21/3205 ; H01L21/336 ; H01L21/4763 ; H01L21/84 ; H01L29/51 ; H01L29/78
摘要：
A semiconductor device manufacturing method comprises: forming a first nitride film on a semiconductor substrate; forming a first oxide film between said semiconductor substrate and said nitride film and forming a second oxide film on said nitride film; forming a second nitride film or an oxide and nitride film on said first nitride film by nitriding said second oxide film; and forming a gate electrode on a gate insulative film including said first oxide film, said first nitride film, and said second nitride film or said oxide and nitride film.
公开/授权文献
- US07816215B2 Semiconductor device manufacturing method 公开/授权日：2010-10-19
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