Semiconductor device and method of fabricating the same
    3.
    发明申请
    Semiconductor device and method of fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号:US20100003813A1

    公开(公告)日:2010-01-07

    申请号:US12585334

    申请日:2009-09-11

    IPC分类号: H01L21/28

    摘要: According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

    摘要翻译: 根据本发明,提供了一种半导体器件,包括:选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区,其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×1022原子/ cm3。

    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07091135B2

    公开(公告)日:2006-08-15

    申请号:US10798337

    申请日:2004-03-12

    IPC分类号: H01L21/31

    摘要: There is disclosed a method of manufacturing a semiconductor device, which comprises forming a film containing metal elements and silicon elements on a semiconductor substrate, exposing the semiconductor substrate to an atmosphere containing an oxidant to form a silicon dioxide film at the interface between the semiconductor substrate and the film containing metal elements and silicon elements, and nitriding the film containing metal elements and silicon elements after forming the silicon dioxide film.

    摘要翻译: 公开了一种制造半导体器件的方法,其包括在半导体衬底上形成含有金属元素和硅元素的膜,将半导体衬底暴露于含有氧化剂的气氛中,以在半导体衬底之间的界面处形成二氧化硅膜 并且所述膜含有金属元素和硅元素,并且在形成二氧化硅膜之后氮化包含金属元素和硅元素的膜。

    Semiconductor apparatus and method of manufacturing the semiconductor apparatus
    7.
    发明申请
    Semiconductor apparatus and method of manufacturing the semiconductor apparatus 有权
    半导体装置及其制造方法

    公开(公告)号:US20080054378A1

    公开(公告)日:2008-03-06

    申请号:US11889278

    申请日:2007-08-10

    IPC分类号: H01L29/76

    摘要: A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

    摘要翻译: 一种半导体装置,其中形成在半导体衬底上的器件包括栅极绝缘膜,该栅极绝缘膜包括形成在基底上的高介电常数膜和形成在高介电常数膜上的抗反应膜,以及形成在抗反应上的栅电极 高介电常数膜包括含有Hf和Zr中的至少一种以及Si和O的膜,或包含Hf和Zr中的至少一种以及Si,O和N的膜,所述抗反应膜包括 SiO 2膜,含有SiO 2作为主要成分的膜和Hf和Zr中的至少一种的膜,含有SiO 2的膜作为 主要成分为N,以SiO 2为主要成分的膜,Hf和N,以SiO 2为主要成分的膜,Zr和N,或膜 含有SiO 2作为主要成分的Hf,Zr和N.

    Semiconductor device and method of fabricating the same
    10.
    发明申请
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US20050236678A1

    公开(公告)日:2005-10-27

    申请号:US10962673

    申请日:2004-10-13

    摘要: According to the present invention, there is provided a semiconductor device comprising: an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer; a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film; a gate electrode formed on said gate insulating film; and source and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.

    摘要翻译: 根据本发明,提供了一种半导体器件,包括:界面绝缘膜,其选择性地形成在半导体衬底的预定区域上,并且具有基本上一个原子层的膜厚度; 形成在所述界面绝缘膜上并具有高于所述界面绝缘膜的介电常数的介电常数的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及源极和漏极区,形成在位于所述栅电极下方的沟道区的两侧的所述半导体衬底的表面区域中。