发明申请
US20050076578A1 Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
有权
天门冬氨酸/甲苯基三唑化学机械平面化的可调组合物和方法
- 专利标题： Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
- 专利标题（中）： 天门冬氨酸/甲苯基三唑化学机械平面化的可调组合物和方法
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申请号： US10683232申请日： 2003-10-10
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公开(公告)号： US20050076578A1公开(公告)日： 2005-04-14
- 发明人: Junaid Siddiqui , Timothy Compton , Bin Hu , Robin Richards
- 申请人： Junaid Siddiqui , Timothy Compton , Bin Hu , Robin Richards
- 主分类号： B24B37/00
- IPC分类号： B24B37/00 ; C09G1/02 ; C09K3/14 ; H01L21/304 ; B24D3/02
摘要：
A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.