Invention Application
US20050076578A1 Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
有权
天门冬氨酸/甲苯基三唑化学机械平面化的可调组合物和方法
- Patent Title: Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
- Patent Title (中): 天门冬氨酸/甲苯基三唑化学机械平面化的可调组合物和方法
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Application No.: US10683232Application Date: 2003-10-10
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Publication No.: US20050076578A1Publication Date: 2005-04-14
- Inventor: Junaid Siddiqui , Timothy Compton , Bin Hu , Robin Richards
- Applicant: Junaid Siddiqui , Timothy Compton , Bin Hu , Robin Richards
- Main IPC: B24B37/00
- IPC: B24B37/00 ; C09G1/02 ; C09K3/14 ; H01L21/304 ; B24D3/02
Abstract:
A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.
Public/Granted literature
- US07153335B2 Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole Public/Granted day:2006-12-26
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