公开(公告)号：US20050076578A1

公开(公告)日：2005-04-14

申请号：US10683232

申请日：2003-10-10

Applicant: Junaid Siddiqui ,  Timothy Compton ,  Bin Hu ,  Robin Richards

Inventor： Junaid Siddiqui ,  Timothy Compton ,  Bin Hu ,  Robin Richards

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  B24D3/02

CPC classification number: C09G1/02

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.

Abstract translation: 描述了用于化学机械平面化（或其他抛光）的组合物和相关方法，其在铜CMP中提供高的钽到铜选择性，并且其可调谐（相对于抛光性能）。 该组合物包含磨料和N-酰基-N-烃氧烷基天冬氨酸化合物和/或甲苯基三唑衍生物。

公开(公告)号：US20080089845A1

公开(公告)日：2008-04-17

申请号：US11847633

申请日：2007-08-30

Applicant: Timothy Compton ,  Jeff Parrott ,  Edward Monaghan ,  Olivier Dasse ,  David Putman

Inventor： Timothy Compton ,  Jeff Parrott ,  Edward Monaghan ,  Olivier Dasse ,  David Putman

IPC: A61K31/423 ,  A61K31/245 ,  A61K31/41 ,  A61P25/18 ,  A61P25/24 ,  A61P29/00 ,  A61P25/28 ,  A61P25/22 ,  A61K49/00 ,  A61K31/4184

CPC classification number: A61K31/4965 ,  A61K31/497 ,  A61K31/50 ,  A61K31/501 ,  A61K31/53 ,  A61K31/5377 ,  C12Q1/34 ,  G01N33/92 ,  G01N2500/04

Abstract: Described herein is a method for determining an effective dose of a composition for inhibiting fatty acid amide hydrolase activity in vivo, by first administering to a subject a dose of a test composition, and subsequently assessing if the level of a fatty acid amide in the subject increases. Also described, is a method for optimizing therapeutic efficacy for treatment of anxiety, depression, pain, or a metabolic disorder by increasing or decreasing a dose of a fatty amide hydrolase inhibitor according to a patient's fatty acid amide levels. In addition, pharmaceutical compositions are described, which contain fatty acid amide hydrolase inhibitors effective for increasing a FAA level in a patient.

Abstract translation: 本文描述了通过首先向受试者施用一定剂量的测试组合物，随后评估受试者中脂肪酸酰胺水平是否用于测定体内脂肪酰胺水解酶活性抑制组合物的有效剂量的方法 增加 还描述了通过根据患者的脂肪酸酰胺水平增加或减少脂肪酰胺水解酶抑制剂的剂量来优化治疗焦虑，抑郁，疼痛或代谢障碍的治疗功效的方法。 此外，描述了含有有效增加患者FAA水平的脂肪酸酰胺水解酶抑制剂的药物组合物。

公开(公告)号：US20070155747A1

公开(公告)日：2007-07-05

申请号：US11617147

申请日：2006-12-28

Applicant: Olivier Dasse ,  David Putman ,  Timothy Compton ,  Jeff Parrott

Inventor： Olivier Dasse ,  David Putman ,  Timothy Compton ,  Jeff Parrott

IPC: A61K31/5377 ,  A61K31/53 ,  A61K31/50 ,  A61K31/501 ,  A61K31/497 ,  A61K31/4965 ,  A61K31/519 ,  A61K31/517

CPC classification number: C07C271/56 ,  C07C271/44 ,  C07C275/28 ,  C07C275/34 ,  C07C275/38 ,  C07C275/42 ,  C07C2601/14 ,  C07C2601/18 ,  C07C2602/08 ,  C07C2603/18 ,  C07D209/08 ,  C07D215/20 ,  C07D215/38 ,  C07D217/02 ,  C07D217/10 ,  C07D263/56 ,  C07D277/64 ,  C07D405/12

Abstract: Pharmacological inhibition of fatty acid amide hydrolase (FAAH) activity leads to increased levels of fatty acid amides. Esters of alkylcarbamic acids are disclosed that are inhibitors of FAAH activity. Compounds disclosed herein inhibit FAAH activity. Described herein are processes for the preparation of esters of alkylcarbamic acid compounds, compositions that include them, and methods of use thereof.

Abstract translation: 脂肪酸酰胺水解酶（FAAH）活性的药理学抑制导致脂肪酸酰胺水平升高。 公开了烷基氨基甲酸酯作为FAAH活性的抑制剂。 本文公开的化合物抑制FAAH活性。 本文描述了制备烷基氨基甲酸化合物的酯的方法，包括它们的组合物及其使用方法。

公开(公告)号：US20070054495A1

公开(公告)日：2007-03-08

申请号：US11509223

申请日：2006-08-24

Applicant: Timothy Compton ,  Junaid Siddiqui ,  Ajoy Zutshi

Inventor： Timothy Compton ,  Junaid Siddiqui ,  Ajoy Zutshi

IPC: H01L21/302

CPC classification number: H01L21/3212 ,  C09G1/02 ,  H01L21/31053

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract translation: 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 该组合物含有硼表面改性的研磨剂，硝基取代的磺酸化合物，每一种化合物的氧化剂和水。 该组合物在金属CMP工艺中为阻挡层材料提供高的去除率。 该组合物特别适用于金属CMP应用的相关方法（例如，步骤2铜CMP工艺）。

公开(公告)号：US20060213868A1

公开(公告)日：2006-09-28

申请号：US11374714

申请日：2006-03-14

Applicant: Junaid Siddiqui ,  Timothy Compton

Inventor： Junaid Siddiqui ,  Timothy Compton

IPC: C09K13/00 ,  C03C15/00 ,  H01L21/302

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises a branched-alkylphenol-substituted-benzotriazole. The composition affords low dishing, high metal removal rates, and high selectivities for removal of copper in relation to barrier layer materials and dielectric materials whilst minimizing local erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP). The composition may also further comprise an isothiazoline compound to synergistically impart lower dishing levels during CMP processing.

Abstract translation: 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 该组合物包含支链烷基苯酚取代的苯并三唑。 该组合物提供了相对于阻挡层材料和电介质材料的低凹陷，高金属去除速率和用于去除铜的高选择性，同时最小化CMP中的局部侵蚀效应。 组合物还可以包含氧化剂，在这种情况下，组合物特别适用于金属CMP应用的相关方法（例如，铜CMP）。 该组合物还可以包含异噻唑啉化合物，以协同地赋予CMP处理期间更低的凹陷度。

公开(公告)号：US20050194563A1

公开(公告)日：2005-09-08

申请号：US11032593

申请日：2005-01-10

Applicant: Junaid Siddiqui ,  Timothy Compton ,  Bin Hu ,  Robin Richards ,  Saifi Usmani

Inventor： Junaid Siddiqui ,  Timothy Compton ,  Bin Hu ,  Robin Richards ,  Saifi Usmani

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  C09K13/00 ,  B44C1/22 ,  C23F1/00 ,  H01L21/302

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The composition possesses high selectivities for removal of copper in relation to tantalum and dielectric materials whilst minimizing local dishing and erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).

Abstract translation: 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 组合物包含研磨剂和三羟甲基型或二亚胺型化合物。 该组合物具有相对于钽和介电材料去除铜的高选择性，同时最小化CMP中的局部凹陷和侵蚀效应。 组合物还可以包含氧化剂，在这种情况下，组合物特别适用于金属CMP应用的相关方法（例如，铜CMP）。

公开(公告)号：US20050044803A1

公开(公告)日：2005-03-03

申请号：US10914113

申请日：2004-08-09

Applicant: Junaid Siddiqui ,  Timothy Compton

Inventor： Junaid Siddiqui ,  Timothy Compton

IPC: B24B1/00 ,  B24D3/00 ,  B24D3/02 ,  C09C1/68 ,  C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09K3/1409 ,  C09K3/1463 ,  Y10T428/259

Abstract: A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

Abstract translation: 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 组合物可以包含研磨剂和分散的杂化有机/无机颗粒。 组合物还可以包含炔化合物。 公开了用于化学机械平面化的两种不同的方法。 在一种方法（方法A）中，该方法中使用的CMP浆料组合物包括研磨剂和分散的杂化有机/无机颗粒。 在另一种方法（方法B）中，该方法中使用的CMP浆料组合物包括研磨剂和炔化合物。 组合物还可以包含氧化剂，在这种情况下，组合物特别适用于金属CMP应用（例如，钨CMP）的相关方法（A和B）。

公开(公告)号：US20060046490A1

公开(公告)日：2006-03-02

申请号：US11212628

申请日：2005-08-29

Applicant: Gautam Banerjee ,  Timothy Compton ,  Junaid Siddiqui ,  Ajoy Zutshi

Inventor： Gautam Banerjee ,  Timothy Compton ,  Junaid Siddiqui ,  Ajoy Zutshi

IPC: H01L21/461

CPC classification number: C09G1/02 ,  C11D3/3947 ,  C11D7/20 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/32125

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

公开(公告)号：US20070075042A1

公开(公告)日：2007-04-05

申请号：US11516002

申请日：2006-09-05

Applicant: Junaid Siddiqui ,  Timothy Compton ,  Daniel Castillo ,  Bin Hu

Inventor： Junaid Siddiqui ,  Timothy Compton ,  Daniel Castillo ,  Bin Hu

IPC: C09K13/00 ,  C03C15/00 ,  B44C1/22 ,  H01L21/302 ,  C23F1/00

CPC classification number: C23F3/06 ,  C09G1/02 ,  C09K3/1445 ,  C09K3/1463 ,  H01L21/3212

Abstract: A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a stabilizer-metal-vinyl pyridine polymer surface-modified colloidal abrasive (e.g., silica) and an oxidizing agent (e.g., hydrogen peroxide), where the metal is a Fenton's reaction metal. The method includes applying the composition to a substrate to be polished (e.g., chemical-mechanical polishing (CMP)), such as substrates containing tungsten or copper and dielectrics layers that being subjected to tungsten or copper CMP for planarization.

Abstract translation: 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 组合物包括稳定剂 - 金属 - 乙烯基吡啶聚合物表面改性的胶体磨料（例如二氧化硅）和氧化剂（例如过氧化氢），其中金属是芬顿的反应金属。 该方法包括将组合物施加到待抛光的基底（例如化学机械抛光（CMP））上，例如含有钨或铜的基底和经受钨或铜CMP的平坦化的电介质层。

公开(公告)号：US20060162261A1

公开(公告)日：2006-07-27

申请号：US11233110

申请日：2005-09-22

Applicant: Junaid Siddiqui ,  Daniel Castillo ,  Robin Richards ,  Timothy Compton

Inventor： Junaid Siddiqui ,  Daniel Castillo ,  Robin Richards ,  Timothy Compton

IPC: C09K3/14 ,  H01L21/302 ,  B24D3/02

CPC classification number: H01L21/31053 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463

Abstract: A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.

Abstract translation: 描述了一种用于抛光（例如化学机械平面化）的含固体含量低的浆料，其包含电介质和使用该浆料的相关方法。 浆料和相关方法在抛光过程中提供高电介质的去除速率，即使浆料具有低的固体含量。 该浆料包括碳酸氢盐，其作为用于在抛光这些基材期间提高介电膜的去除速率的催化剂。