发明申请
- 专利标题： Semiconductor device and manufacturing method of the same
- 专利标题（中）： 半导体器件及其制造方法相同
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申请号： US10799780申请日： 2004-03-15
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公开(公告)号： US20050077550A1公开(公告)日： 2005-04-14
- 发明人: Satoshi Inaba , Makoto Fujiwara
- 申请人： Satoshi Inaba , Makoto Fujiwara
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2002-352628 20031010
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L21/28 ; H01L21/8238 ; H01L27/02 ; H01L27/07 ; H01L27/08 ; H01L27/092 ; H01L27/11 ; H01L27/12 ; H01L27/148 ; H01L29/41 ; H01L29/49 ; H01L29/786
摘要：
An aspect of the present invention provides a semiconductor device that includes a first transistor including a source region, a drain region provided in the same device region as the source region, and a loop-shaped gate electrode region, and a second transistor sharing, with the first transistor, the loop-shaped gate electrode region and the source region or the drain region.
公开/授权文献
- US07112858B2 Semiconductor device and manufacturing method of the same 公开/授权日：2006-09-26
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