发明申请
- 专利标题： Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device
- 专利标题（中）： 蚀刻组合物，其制备方法，蚀刻氧化膜的方法以及半导体器件的制造方法
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申请号： US10962508申请日： 2004-10-13
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公开(公告)号： US20050081883A1公开(公告)日： 2005-04-21
- 发明人: Yong-Kyun Ko , Sang-Mun Chon , In-Hoi Doh , Pil-Kwon Jun , Sang-Mi Lee , Kwang-shin Lim , Myoung-Ok Han
- 申请人： Yong-Kyun Ko , Sang-Mun Chon , In-Hoi Doh , Pil-Kwon Jun , Sang-Mi Lee , Kwang-shin Lim , Myoung-Ok Han
- 优先权： KR2003-72692 20031017; KR2004-235 20040105
- 主分类号： C08K13/08
- IPC分类号： C08K13/08 ; B08B3/08 ; C09K13/08 ; C11D1/00 ; C11D1/72 ; C11D3/02 ; C11D11/00 ; C23F1/16 ; C23F1/24 ; H01L21/308 ; H01L21/311 ; H01L21/8242 ; H01L27/108
摘要：
An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.