发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10983610申请日： 2004-11-09
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公开(公告)号： US20050093020A1公开(公告)日： 2005-05-05
- 发明人: Akira Inoue , Takeshi Takagi , Yoshihiro Hara , Minoru Kubo
- 申请人： Akira Inoue , Takeshi Takagi , Yoshihiro Hara , Minoru Kubo
- 申请人地址： JP Osaka
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JP2001-104102 20010403; JP2001-150719 20010521
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/314 ; H01L21/316 ; H01L21/77 ; H01L21/8238 ; H01L21/8242 ; H01L21/8246 ; H01L21/84 ; H01L27/092 ; H01L27/115 ; H01L27/12 ; H01L29/10 ; H01L29/78 ; H01L29/786 ; H01L29/80 ; H01L31/0392
摘要：
A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
公开/授权文献
- US07170110B2 Semiconductor device and method for fabricating the same 公开/授权日：2007-01-30
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