发明申请
US20050101143A1 Methods of fabricating a semiconductor device and forming a trench region in a semiconductor device
审中-公开
制造半导体器件并在半导体器件中形成沟槽区域的方法
- 专利标题: Methods of fabricating a semiconductor device and forming a trench region in a semiconductor device
- 专利标题(中): 制造半导体器件并在半导体器件中形成沟槽区域的方法
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申请号: US10911730申请日: 2004-08-05
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公开(公告)号: US20050101143A1公开(公告)日: 2005-05-12
- 发明人: Seung-Jae Lee , Min Kim , Jai-Dong Lee , Kyoung-Seok Kim , Hyeon-Deok Lee , Ju-Bum Lee , Hun-Hyeoung Leam
- 申请人: Seung-Jae Lee , Min Kim , Jai-Dong Lee , Kyoung-Seok Kim , Hyeon-Deok Lee , Ju-Bum Lee , Hun-Hyeoung Leam
- 优先权: KR2003-79590 20031111
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; H01L21/308 ; H01L21/311 ; H01L21/762
摘要:
In a method of forming a shallow trench isolation (STI) region in a semiconductor device, a pad oxide layer and a pad nitride layer may be formed on a semiconductor substrate. The pad nitride layer and pad oxide layer may be patterned to form an isolation region with exposed portions on the pad nitride layer, pad oxide layer and semiconductor substrate. A radical oxide layer may be formed on the exposed portions, and a trench may be formed in the isolation region by etching the semiconductor substrate and radical oxide layer. The STI region may be formed by filling an insulating layer in the trench.