Invention Application
- Patent Title: Photodetector
- Patent Title (中): 光电检测器
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Application No.: US10889125Application Date: 2004-07-13
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Publication No.: US20050151061A1Publication Date: 2005-07-14
- Inventor: Mutsuo Ogura , Yasushi Nagamune , Takeyoshi Sugaya
- Applicant: Mutsuo Ogura , Yasushi Nagamune , Takeyoshi Sugaya
- Applicant Address: JP Tokyo
- Assignee: NAT. INST. OF ADVANCED INDUSTR. SCIENCE AND TECH.
- Current Assignee: NAT. INST. OF ADVANCED INDUSTR. SCIENCE AND TECH.
- Current Assignee Address: JP Tokyo
- Priority: JP2004-005580 20040113
- Main IPC: H01L31/10
- IPC: H01L31/10 ; H01L31/00

Abstract:
Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.
Public/Granted literature
- US07015453B2 Photodetector Public/Granted day:2006-03-21
Information query
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