公开(公告)号：US20040189373A1

公开(公告)日：2004-09-30

申请号：US10808432

申请日：2004-03-25

Applicant: NAT. INST. OF ADVANCED INDUSTR. SCIENCE AND TECH.

Inventor： Toshihiro Sekigawa ,  Hanpei Koike ,  Tadashi Nakagawa

IPC: G06G007/18

CPC classification number: H03K3/356017 ,  H03K3/356069 ,  H03K17/302 ,  H03K2217/0018

Abstract: In a double gate FET, the threshold voltage during the operation of a transient response thereof is enabled to be arbitrarily and accurately controlled by a method that includes applying a first input signal intended to perform an ordinary logic operation to one of the gate electrodes thereof and applying, in response to this signal, a second signal that has a signal-level temporal-change direction as the first input signal and has at least one of the low level and the high level thereof shifted by a predetermined magnitude or endowed with a predetermined time difference or has the time slower or faster signal level change of the signal to the other gate electrode.

Abstract translation: 在双栅极FET中，其瞬态响应的操作期间的阈值电压能够通过包括将用于执行常规逻辑运算的第一输入信号施加到其栅电极之一的方法来任意和精确地控制， 响应于该信号，施加具有作为第一输入信号的信号电平时间变化方向的第二信号，并且将低电平和高电平中的至少一个偏移预定幅度或赋予预定的 时间差或信号电平变化较慢或较快的信号到另一个栅电极的时间。

公开(公告)号：US20060260398A1

公开(公告)日：2006-11-23

申请号：US11491277

申请日：2006-07-24

Applicant: Akira Umeda

Inventor： Akira Umeda

IPC: G01P15/00

CPC classification number: G01P15/0975 ,  G01N3/30 ,  G01N3/62 ,  G01N2203/021 ,  G01P21/00

Abstract: A metal rod guide (30) supports a metal rod (1) that can be inclined at an arbitrary angle, the support is instantaneously released to produce a free fall state, and during the release period, a first end surface (2) of the metal rod is impacted by a projectile (3) at the same angle as the metal rod, generating an elastic wave pulse in the metal rod. A direct current acceleration sensor (23) detects an acceleration arising when the elastic wave pulse reflects at the other end surface (22) of the metal rod. A strain gauge (25) provided on a side surface of the metal rod and/or a laser interferometer (24) measure strain and end surface motion and the measured values are processed to obtain a frequency response of the direct current acceleration sensor and measure frequency characteristics of the direct current acceleration sensor.

Abstract translation: 金属棒引导件（30）支撑能够以任意角度倾斜的金属杆（1），立即释放支撑件以产生自由下落状态，并且在释放期间，将第一端面（2） 金属棒以与金属杆相同的角度被射弹（3）撞击，在金属棒中产生弹性波脉冲。 直流加速度传感器（23）检测当弹性波脉冲在金属杆的另一端面（22）处反射时产生的加速度。 设置在金属杆和/或激光干涉仪（24）的侧面上的应变仪（25）测量应变和端面运动，并且对所测量的值进行处理以获得直流加速度传感器的频率响应并测量频率 直流加速度传感器的特点。

公开(公告)号：US20050176095A1

公开(公告)日：2005-08-11

申请号：US10504988

申请日：2002-08-20

Applicant: Genryou Umitsuki ,  Osamu Hatamoto ,  Seiichi Hara ,  Tsutomu Masuda ,  Motoaki Sano ,  Masayuki Machida

Inventor： Genryou Umitsuki ,  Osamu Hatamoto ,  Seiichi Hara ,  Tsutomu Masuda ,  Motoaki Sano ,  Masayuki Machida

IPC: C12N15/09 ,  C07K14/38 ,  C12N1/14 ,  C12N1/15 ,  C12N9/50 ,  C12N9/62 ,  C12N15/31 ,  C12P21/00 ,  C12R1/69 ,  C12P21/06 ,  C07K14/37 ,  C12N1/16 ,  C12N15/74

CPC classification number: C07K14/38

Abstract: This invention provides a transcription factor that has functions of regulating the expression of a sulfur-assimilatory gene of koji mold during culture, and a gene encoding the same. This invention also relates to a protein comprising the amino acid sequence as shown in SEQ ID NO: 3, and a gene encoding the amino acid sequence as shown in SEQ ID NO: 3 or comprising the nucleotide sequence as shown in SEQ ID NO: 2.

Abstract translation: 本发明提供了具有调节培养期间曲霉的硫同化基因的表达的功能的转录因子和编码其的基因。 本发明还涉及包含SEQ ID NO：3所示的氨基酸序列的蛋白质和编码SEQ ID NO：3所示的氨基酸序列的基因，或包含SEQ ID NO：2所示的核苷酸序列 。

公开(公告)号：US20060056472A1

公开(公告)日：2006-03-16

申请号：US10505770

申请日：2003-02-24

Applicant: Mutsuo Ogura

Inventor： Mutsuo Ogura

IPC: H01S5/00

CPC classification number: H01S5/341 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02546 ,  H01L21/0259 ,  H01L21/02636 ,  H01L29/127 ,  H01S5/0265 ,  H01S5/1053 ,  H01S5/1206 ,  H01S5/1228 ,  H01S5/1237 ,  H01S5/22 ,  H01S5/3412 ,  H01S5/4031

Abstract: On a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction Is of advance of an oscillated laser beam and mutually disposed in parallel along the direction Is of advance of the laser beam, a plurality of quantum wires (11) are formed on the V-grooves by selective growth of a Group III-V compound. The plurality of quantum wires are adapted to serve as limited-length active layer regions mutually disposed in parallel along the direction Is of advance of the laser beam with a period of an integer times of a quarter wavelength in a medium of a laser active layer and individually corresponding to stripe widths of laser. Consequently, a quantum nano-structure semiconductor laser satisfying at least one, or preferably both, of the decrease of a threshold and the stabilization of an oscillation frequency as compared with a conventional countertype can be provided.

Abstract translation: 在具有多个V形槽的槽形半导体衬底上，多个V形槽在垂直于振荡的激光束的前进方向Is的方向上分别延伸并且沿着激光束的前进方向Is并行地相互设置，多个量子线 11）通过III-V族化合物的选择性生长形成在V形槽上。 多个量子线适合用作在激光有源层的介质中沿着激光束的前进方向的平均相互配置的具有四分之一波长整数倍的周期的有限长度的有源层区域，以及 分别对应于激光的条纹宽度。 因此，可以提供与传统的逆型相比，满足阈值的降低和振荡频率的稳定化中的至少一个，或优选两者的量子纳米结构半导体激光器。

公开(公告)号：US20060010959A1

公开(公告)日：2006-01-19

申请号：US10509580

申请日：2003-03-31

Applicant: Akira Umeda

Inventor： Akira Umeda

IPC: G01P21/00 ,  G01P15/00

CPC classification number: G01P21/00

Abstract: An acceleration sensor (22) to be calibrated and evaluated is affixed to one end surface (22) of a metal rod (1), and a plurality of projectiles (3) are made to impact the other end surface (2) of the metal rod at prescribed time intervals, generating an elastic wave pulse in the metal rod. Dynamic displacement, velocity or acceleration in a direction normal to the other end surface arising in a process of the generated elastic wave pulse reaching and being reflected by the one end surface where the acceleration sensor is affixed is measured, and an acceleration measured, processed and corrected by a strain gauge (25) attached to a side surface of the metal rod or by a laser interferometer (24) is obtained, and the corrected acceleration and the output of the acceleration sensor are compared to thereby carry out calibration and evaluation of the acceleration sensor.

公开(公告)号：US20050151061A1

公开(公告)日：2005-07-14

申请号：US10889125

申请日：2004-07-13

Applicant: Mutsuo Ogura ,  Yasushi Nagamune ,  Takeyoshi Sugaya

Inventor： Mutsuo Ogura ,  Yasushi Nagamune ,  Takeyoshi Sugaya

IPC: H01L31/10 ,  H01L31/00

CPC classification number: B82Y10/00 ,  B82Y20/00 ,  H01L31/035236

Abstract: Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.

Abstract translation: 量子线形成在V沟槽衬底中的V形槽的底部上，作为源电极和漏电极之间的沟道或者作为沟道的至少一部分。 在量子线内或位于与量子线连接或相邻的位置处设置光载流子积聚区域，用于当光照射到至少包括覆盖量子线的覆层的光敏区域时产生的电荷。 在上包层中设置凹部以使光载流子积聚区域定位。 结果，可以提供在扩展波长区域中显示出高灵敏度，高速度和低功耗的光电检测器。 还可以提供能够通过一次选择性生长来构造其核心部分的光电检测器。

公开(公告)号：US20050048485A1

公开(公告)日：2005-03-03

申请号：US10399407

申请日：2002-03-27

Applicant: Ryuichiro Kurane ,  Takahiro Kanagawa ,  Yoichi Kamagata ,  Masaki Torimura ,  Shinya Kurata ,  Kazutaka Yamada ,  Toyokazu Yokomaku

Inventor： Ryuichiro Kurane ,  Takahiro Kanagawa ,  Yoichi Kamagata ,  Masaki Torimura ,  Shinya Kurata ,  Kazutaka Yamada ,  Toyokazu Yokomaku

IPC: C12Q1/68 ,  G01N33/58 ,  C07H21/04

CPC classification number: G01N33/582 ,  C12Q1/6818 ,  C12Q2565/101 ,  C12Q2565/107 ,  C12Q2565/1015

Abstract: A novel nucleic acid probe for nucleic acid determination includes a single-stranded nucleic acid labeled with plural fluorescent dyes containing at least one pair of fluorescent dyes to induce FRET, the pair of fluorescent dyes including a fluorescent dye (a donor dye) capable of serving as a donor dye and a fluorescent dye (an acceptor dye) capable of serving as an acceptor dye, in which the nucleic acid probe has such a base sequence and is labeled with the fluorescent dyes so that the fluorescence intensity of the acceptor dye decreases upon hybridization with a target nucleic acid. A novel nucleic acid determination method uses the probe. The probe and method can determine one or more types of target nucleic acids in an assay system in parallel using a simple apparatus.

Abstract translation: 用于核酸测定的新型核酸探针包括用含有至少一对荧光染料的多种荧光染料标记以诱导FRET的单链核酸，该对荧光染料包括能够服用的荧光染料（供体染料） 作为能够用作受体染料的供体染料和荧光染料（受体染料），其中核酸探针具有这样的碱基序列并用荧光染料标记，使得受体染料的荧光强度降低 与靶核酸杂交。 一种新型核酸测定方法使用探针。 探针和方法可以使用简单的装置并行测定测定系统中的一种或多种类型的靶核酸。

公开(公告)号：US20040115441A1

公开(公告)日：2004-06-17

申请号：US10650672

申请日：2003-08-29

Applicant: NAT. INST. OF ADVANCED INDUSTR. SCIENCE AND TECH. ,  Tokyo Institute of Technology

Inventor： Kazumi Kato ,  Takeshi Miki ,  Kaori Nishizawa ,  Kazuyuki Suzuki ,  Desheng Fu ,  Hiroshi Ishiwara

IPC: B32B009/00 ,  C03C003/00

CPC classification number: C04B35/62807 ,  C01G23/003 ,  C01P2002/72 ,  C04B35/475 ,  C04B2235/3234 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/441 ,  C04B2235/80 ,  H01L21/31691

Abstract: The present invention provides compositional buffers for electronic ceramics containing volatile elements, and a method for manufacturing the same, as well as a method for manufacturing electronic ceramics using the compositional buffer. The surfaces of the fine crystal grains that make up an electronic ceramic such as a bismuth-based laminar compound or lead-based perovskite compound containing highly volatile cations such as bismuth or lead, or a thin film thereof, are covered, resulting in a compositional buffer capable of maintaining an electronic ceramic containing a volatile element or a thin film thereof at its stoichiometric composition, and this compositional buffer is composed of a silicate- or borate-based compound that readily forms an amorphous structure, and also provided is a method for manufacturing an electronic ceramic in which the above compositional buffer is used to cover the surfaces of the fine crystal grains that make up the above-mentioned electronic ceramic or thin film thereof by chemical solution method.

Abstract translation: 本发明提供了含有挥发性元素的电子陶瓷的组成缓冲剂及其制造方法，以及使用该组合缓冲剂制造电子陶瓷的方法。 覆盖构成电子陶瓷的微晶粒的表面，例如铋基层状化合物或含有高挥发性阳离子如铅或铅的铅基钙钛矿化合物或其薄膜，形成组成 能够以其化学计量组成保持含有挥发性元素或其薄膜的电子陶瓷，并且该组成缓冲液由容易形成无定形结构的硅酸盐或硼酸盐基化合物组成，并且还提供了一种用于 制造电子陶瓷，其中使用上述组成缓冲液通过化学溶液法覆盖构成上述电子陶瓷或其薄膜的细晶粒的表面。

公开(公告)号：US20030224103A1

公开(公告)日：2003-12-04

申请号：US10462683

申请日：2003-06-17

Applicant: NAT. INST. OF ADVANCED INDUSTR. SCIENCE AND TECH. ,  Hiroyuki AKINAGA

Inventor： Hiroyuki Akinaga ,  Masaharu Oshima ,  Masaki Mizuguchi

IPC: B05D005/12

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/09 ,  G11B5/376 ,  G11B5/3993 ,  G11B2005/3996 ,  H01F10/193 ,  H01F10/324 ,  H01F10/3254 ,  Y10T428/12465 ,  Y10T428/12681

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300null C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract translation: 磁阻效应膜包括基板，设置在基板上的多个铁磁性粒子，沉积在基板上并覆盖多个铁磁性粒子的非磁性膜，以及配置在非磁性膜上的一对电极， 通过施加磁场来改变一对电极。 磁阻效应膜通过在不超过300℃的温度下在基板上气相沉积铁磁粒子起始材料来制造，原料气相沉积的量足以覆盖基板表面，厚度范围为0.5至 15nm，并且在基板上形成铁磁性粒子之后，在不超过室温的温度下在铁磁性粒子上气相沉积非磁性膜，该非磁性膜的厚度范围为1〜100nm，并且提供一对 电极各自位于非磁性膜上的预定位置。