公开(公告)号：US20050151061A1

公开(公告)日：2005-07-14

申请号：US10889125

申请日：2004-07-13

Applicant: Mutsuo Ogura ,  Yasushi Nagamune ,  Takeyoshi Sugaya

Inventor： Mutsuo Ogura ,  Yasushi Nagamune ,  Takeyoshi Sugaya

IPC: H01L31/10 ,  H01L31/00

CPC classification number: B82Y10/00 ,  B82Y20/00 ,  H01L31/035236

Abstract: Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.

Abstract translation: 量子线形成在V沟槽衬底中的V形槽的底部上，作为源电极和漏电极之间的沟道或者作为沟道的至少一部分。 在量子线内或位于与量子线连接或相邻的位置处设置光载流子积聚区域，用于当光照射到至少包括覆盖量子线的覆层的光敏区域时产生的电荷。 在上包层中设置凹部以使光载流子积聚区域定位。 结果，可以提供在扩展波长区域中显示出高灵敏度，高速度和低功耗的光电检测器。 还可以提供能够通过一次选择性生长来构造其核心部分的光电检测器。

公开(公告)号：US07015453B2

公开(公告)日：2006-03-21

申请号：US10889125

申请日：2004-07-13

Applicant: Mutsuo Ogura ,  Yasushi Nagamune ,  Takeyoshi Sugaya

Inventor： Mutsuo Ogura ,  Yasushi Nagamune ,  Takeyoshi Sugaya

IPC: H01L29/06

CPC classification number: B82Y10/00 ,  B82Y20/00 ,  H01L31/035236

Abstract: Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.

Abstract translation: 量子线形成在V沟槽衬底中的V形槽的底部上，作为源电极和漏电极之间的沟道或者作为沟道的至少一部分。 在量子线内或位于与量子线连接或相邻的位置处设置光载流子积聚区域，用于当光照射到至少包括覆盖量子线的覆层的光敏区域时产生的电荷。 在上包层中设置凹部以使光载流子积聚区域定位。 结果，可以提供在扩展波长区域中显示出高灵敏度，高速度和低功耗的光电检测器。 还可以提供能够通过一次选择性生长来构造其核心部分的光电检测器。

公开(公告)号：US07221005B2

公开(公告)日：2007-05-22

申请号：US10561530

申请日：2001-09-28

Applicant: Mutsuo Ogura ,  Takeyoshi Sugaya ,  Kee-Youn Jang ,  Yoshinobu Sugiyama

Inventor： Mutsuo Ogura ,  Takeyoshi Sugaya ,  Kee-Youn Jang ,  Yoshinobu Sugiyama

IPC: H01L31/00

CPC classification number: B82Y10/00 ,  H01L29/045 ,  H01L29/125 ,  H01L29/775

Abstract: A negative resistance field-effect element that is a negative differential resistance field-effect element capable of achieving negative resistance at a low power supply voltage (low drain voltage) and also enabling securement of a high PVCR is formed on its InP substrate 11 having an asymmetrical V-groove whose surface on one side is a (100) plane and surface on the other side is a (011) plane with an InAlAs barrier layer (12) that has a trench (TR) one of whose opposed lateral faces is a (111) A plane and the other of which is a (331) B plane. An InGaAs quantum wire (13) that has a relatively narrow energy band gap is formed at the trench bottom surface as a high-mobility channel. An InAlAs modulation-doped layer (20) having a relatively wide energy band gap is formed on the quantum wire as a low-mobility channel. A source electrode (42) and a drain electrode (43) each in electrical continuity with the quantum wire (13) constituting the high-mobility channel through a contact layer (30) and extending in the longitudinal direction of the quantum wire (13) as spaced from each other, and a gate electrode (41) provided between the source electrode (42) and the drain electrode (43) to face the low-mobility channel (20) through an insulating layer or a Schottky junction, are provided. Owing to the foregoing configuration, a very narrow-width quantum wire whose lateral confinement size can, without restriction by the lithographic technology limit, be made 100 nm or less is usable as a high-mobility channel, whereby there can be obtained a negative resistance field-effect element that develops a negative characteristic at a low power supply voltage and enables securement of a high PVCR.

Abstract translation: 作为能够在低电源电压（低漏极电压）下实现负电阻并且还能够确保高PVCR的负的差分电阻场效应元件的负电阻场效应元件形成在其具有 非对称V槽，其一侧的表面为（100）面，另一侧的表面为具有InAlAs阻挡层（12）的（011）平面，所述InAlAs势垒层具有沟槽（TR），所述沟槽（TR）的相对侧面之一为 （111）一个平面，另一个是（331）B平面。 在沟槽底面形成具有较窄能带隙的InGaAs量子线（13）作为高迁移率通道。 在量子线上形成具有相对宽的能带隙的InAlAs调制掺杂层（20）作为低迁移率信道。 每个与构成高迁移率通道的量子线（13）导电连接的源电极（42）和漏电极（43）通过接触层（30）沿量子线（13）的纵向方向延伸， 并且设置在源电极（42）和漏电极（43）之间通过绝缘层或肖特基结面对低迁移率通道（20）的栅电极（41）。 由于上述结构，可以使绝缘尺寸大小不受光刻技术限制的极窄宽度量子线作为100nm以下，作为高​​迁移率通道，由此可以获得负电阻 场效应元件在低电源电压下产生负特性并且能够确保高PVCR。

公开(公告)号：US20060267045A1

公开(公告)日：2006-11-30

申请号：US10561530

申请日：2003-09-28

Applicant: Mutsuo Ogura ,  Takeyoshi Sugaya ,  Kee-Youn Jang ,  Yoshinobu Sugiyama

Inventor： Mutsuo Ogura ,  Takeyoshi Sugaya ,  Kee-Youn Jang ,  Yoshinobu Sugiyama

IPC: H01L31/00

CPC classification number: B82Y10/00 ,  H01L29/045 ,  H01L29/125 ,  H01L29/775

Abstract: A negative resistance field-effect element that is a negative differential resistance field-effect element capable of achieving negative resistance at a low power supply voltage (low drain voltage) and also enabling securement of a high PVCR is formed on its InP substrate 11 having an asymmetrical V-groove whose surface on one side is a (100) plane and surface on the other side is a (011) plane with an InAlAs barrier layer (12) that has a trench (TR) one of whose opposed lateral faces is a (111) A plane and the other of which is a (331) B plane. An InGaAs quantum wire (13) that has a relatively narrow energy band gap is formed at the trench bottom surface as a high-mobility channel. An InAlAs modulation-doped layer (20) having a relatively wide energy band gap is formed on the quantum wire as a low-mobility channel. A source electrode (42) and a drain electrode (43) each in electrical continuity with the quantum wire (13) constituting the high-mobility channel through a contact layer (30) and extending in the longitudinal direction of the quantum wire (13) as spaced from each other, and a gate electrode (41) provided between the source electrode (42) and the drain electrode (43) to face the low-mobility channel (20) through an insulating layer or a Schottky junction, are provided. Owing to the foregoing configuration, a very narrow-width quantum wire whose lateral confinement size can, without restriction by the lithographic technology limit, be made 100 nm or less is usable as a high-mobility channel, whereby there can be obtained a negative resistance field-effect element that develops a negative characteristic at a low power supply voltage and enables securement of a high PVCR.

Abstract translation: 作为能够在低电源电压（低漏极电压）下实现负电阻并且还能够确保高PVCR的负的差分电阻场效应元件的负电阻场效应元件形成在其具有 非对称V槽，其一侧的表面为（100）面，另一侧的表面为具有InAlAs阻挡层（12）的（011）平面，所述InAlAs势垒层具有沟槽（TR），所述沟槽（TR）的相对侧面之一为 （111）一个平面，另一个是（331）B平面。 在沟槽底面形成具有较窄能带隙的InGaAs量子线（13）作为高迁移率通道。 在量子线上形成具有相对宽的能带隙的InAlAs调制掺杂层（20）作为低迁移率信道。 每个与构成高迁移率通道的量子线（13）导电连接的源电极（42）和漏电极（43）通过接触层（30）沿量子线（13）的纵向方向延伸， 并且设置在源电极（42）和漏电极（43）之间通过绝缘层或肖特基结面对低迁移率通道（20）的栅电极（41）。 由于上述结构，可以使绝缘尺寸大小不受光刻技术限制的极窄宽度量子线作为100nm以下，作为高​​迁移率通道，由此可以获得负电阻 场效应元件在低电源电压下产生负特性并且能够确保高PVCR。

公开(公告)号：US07652310B2

公开(公告)日：2010-01-26

申请号：US12064371

申请日：2006-08-25

Applicant: Takeyoshi Sugaya ,  Kazuhiro Komori

Inventor： Takeyoshi Sugaya ,  Kazuhiro Komori

IPC: H01L31/00

CPC classification number: H01L29/7727 ,  B82Y10/00 ,  H01L29/1029

Abstract: There is provided a 3-terminal negative differential resistance field effect element having a high output and high frequency characteristic, requiring low power consumption, and preferably having a high PVCR. The field effect element uses a compound hetero structure and forms a dual channel layer by connecting a high-transfer degree quantum well layer (13) to a low-transfer degree quantum dot layer (15) via a barrier layer (14) on a substrate (11). Under existence of an electric field obtained by voltage application to a gate electrode (17), the negative resistance field effect element (10) changes a carrier accelerated by a drain voltage applied to a drain electrode (19) from a high-transfer degree channel to a low-transfer degree channel by the tunnel effect or over the barrier layer, thereby exhibiting negative differential resistance for the drain current and changing the negative resistance inclination by the gate voltage.

Abstract translation: 提供具有高输出和高频特性的3端负差分电阻场效应元件，需要低功耗，优选具有高PVCR。 场效应元件使用复合异质结构，通过在基板上经由阻挡层（14）将高转移量子阱层（13）连接到低转移量子点层（15）而形成双沟道层 （11）。 在通过施加到栅电极（17）的电压而获得的电场存在的情况下，负电阻场效应元件（10）将施加到漏电极（19）的漏极电压加速的载流子从高转换度通道 通过隧道效应或阻挡层上的低转移度通道，从而对漏电流呈现负的差分电阻，并通过栅极电压改变负电阻倾斜。

公开(公告)号：US20090127542A1

公开(公告)日：2009-05-21

申请号：US12064371

申请日：2006-08-25

Applicant: Takeyoshi Sugaya ,  Kazuhiro Komori

Inventor： Takeyoshi Sugaya ,  Kazuhiro Komori

IPC: H01L29/66 ,  H03B7/06 ,  H01L29/78

CPC classification number: H01L29/7727 ,  B82Y10/00 ,  H01L29/1029

Abstract: There is provided a 3-terminal negative differential resistance field effect element having a high output and high frequency characteristic, requiring low power consumption, and preferably having a high PVCR. The field effect element uses a compound hetero structure and forms a dual channel layer by connecting a high-transfer degree quantum well layer (13) to a low-transfer degree quantum dot layer (15) via a barrier layer (14) on a substrate (11). Under existence of an electric field obtained by voltage application to a gate electrode (17), the negative resistance field effect element (10) changes a carrier accelerated by a drain voltage applied to a drain electrode (19) from a high-transfer degree channel to a low-transfer degree channel by the tunnel effect or over the barrier layer, thereby exhibiting negative differential resistance for the drain current and changing the negative resistance inclination by the gate voltage.

Abstract translation: 提供具有高输出和高频特性的3端负差分电阻场效应元件，需要低功耗，优选具有高PVCR。 场效应元件使用复合异质结构，通过在基板上经由阻挡层（14）将高转移量子阱层（13）连接到低转移量子点层（15）而形成双沟道层 （11）。 在通过施加到栅电极（17）的电压而获得的电场存在的情况下，负电阻场效应元件（10）将施加到漏电极（19）的漏极电压加速的载流子从高转换度通道 通过隧道效应或阻挡层上的低转移度通道，从而对漏极电流呈现负的差分电阻，并通过栅极电压改变负的电阻倾斜。