发明申请
- 专利标题： Silicon germanium surface layer for high-k dielectric integration
- 专利标题（中）： 硅锗表面层用于高k电介质集成
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申请号： US10797876申请日： 2004-03-10
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公开(公告)号： US20050199877A1公开(公告)日： 2005-09-15
- 发明人: Anthony Dip , Pradip Roy , Sanjeev Kaushal , Allen Leith , Seungho Oh , Raymond Joe
- 申请人： Anthony Dip , Pradip Roy , Sanjeev Kaushal , Allen Leith , Seungho Oh , Raymond Joe
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited of TBS Broadcast Center
- 当前专利权人： Tokyo Electron Limited of TBS Broadcast Center
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/316 ; H01L21/318 ; H01L29/51 ; H01L29/12 ; H01L21/36 ; H01L21/3205
摘要：
A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.