公开(公告)号：US20050199877A1

公开(公告)日：2005-09-15

申请号：US10797876

申请日：2004-03-10

申请人： Anthony Dip ,  Pradip Roy ,  Sanjeev Kaushal ,  Allen Leith ,  Seungho Oh ,  Raymond Joe

发明人： Anthony Dip ,  Pradip Roy ,  Sanjeev Kaushal ,  Allen Leith ,  Seungho Oh ,  Raymond Joe

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L29/12 ,  H01L21/36 ,  H01L21/3205

CPC分类号： H01L21/31604 ,  H01L21/02142 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3185 ,  Y10T29/41

摘要： A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.

摘要翻译： 一种使用硅锗（SiGe）表面层将高k电介质层集成到半导体器件中的方法。 该方法在衬底上形成SiGe表面层，并在SiGe表面层上沉积高k电介质层。 在高k电介质层的沉积和沉积高k电介质层之间的退火工艺中的一个或两个期间，形成位于高k电介质层和SiGe表面层的未反应部分之间的氧化物层 。 该方法还包括在高k电介质层上形成电极层。

公开(公告)号：US20050199872A1

公开(公告)日：2005-09-15

申请号：US10797425

申请日：2004-03-10

申请人： Pradip Roy ,  Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Pradip Roy ,  Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L29/161 ,  H01L29/49 ,  H01L29/06

CPC分类号： H01L21/67109 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2807 ,  H01L29/161

摘要： A SiGe thin layer semiconductor structure containing a substrate having a dielectric layer, a variable composition SixGe1-x layer on dielectric layer, and a Si cap layer on the variable composition SixGe1-x layer. The variable composition SixGe1-x layer can contain a SixGe1-x layer with a graded Ge content or a plurality of SixGe1-x sub-layers each with different Ge content. In one embodiment of the invention, the SiGe thin layer semiconductor structure contains a semiconductor substrate having a dielectric layer, a Si-containing seed layer on the dielectric layer, a variable composition SixGe1-x layer on the seed layer, and a Si cap layer on the variable composition SixGe1-x layer. A method and processing tool for fabricating the SiGe thin layer semiconductor structure are also provided.

摘要翻译： SiGe薄层半导体结构，其包含在电介质层上具有电介质层，可变成分Si x 1 Ge 1-x层的衬底和可变组件上的Si覆盖层 组合物Si 1 x 1-x <＆gt;层。 可变成分Si x 1 Ge 1-x层可以含有Si x N 1 Ge 1-x层，其中a 分级的Ge含量或多个具有不同Ge含量的Si x 1 Ge 1-x N sub子层。 在本发明的一个实施例中，SiGe薄层半导体结构包含具有电介质层的半导体衬底，介电层上的含Si种子层，可变成分Si x Si -x 层，以及可变成分Si x 1 Ge 1-x层上的Si覆盖层。 还提供了一种用于制造SiGe薄层半导体结构的方法和处理工具。

公开(公告)号：US20050048742A1

公开(公告)日：2005-03-03

申请号：US10647534

申请日：2003-08-26

申请人： Anthony Dip ,  Pradip Roy ,  Raymond Joe

发明人： Anthony Dip ,  Pradip Roy ,  Raymond Joe

IPC分类号： H01L21/28 ,  H01L21/306 ,  H01L21/302 ,  H01L21/322 ,  H01L21/461

CPC分类号： H01L21/28238 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/28255

摘要： This invention provides a method for modifying the surface properties of a Si or Si alloy substrate by performing repeated etch-grow cycles of thermal oxide to yield a more defect free substrate with a more uniform nucleating surface which provides an improved interface for dielectric formation. Additionally, this method of processing does not expose the substrate to ambient atmosphere and preserves the improved surface until subsequent processing steps are performed.

摘要翻译： 本发明提供了一种通过进行热氧化物的重复蚀刻生长循环来改善Si或Si合金衬底的表面性质的方法，以产生具有更均匀的成核表面的更无缺陷的衬底，其提供用于电介质形成的改进的界面。 此外，这种处理方法不会使衬底暴露于环境大气中并保留改进的表面，直到执行后续的处理步骤。

公开(公告)号：US20060019587A1

公开(公告)日：2006-01-26

申请号：US10897192

申请日：2004-07-21

申请人： Manish Deopura ,  Hem Vaidya ,  Pradip Roy

发明人： Manish Deopura ,  Hem Vaidya ,  Pradip Roy

IPC分类号： B24D11/00

CPC分类号： B24B37/26 ,  B24D15/04 ,  B24D18/0009 ,  B29C33/3842 ,  B29C33/405 ,  B29C33/424 ,  B29C33/565 ,  B29K2083/00 ,  B33Y80/00

摘要： Methods for producing in-situ grooves in CMP pads are provided. In general, the methods for producing in-situ grooves comprise the steps of patterning a silicone lining, placing the silicone lining in, or on, a mold, adding CMP pad material to the silicone lining, and allowing the CMP pad to solidify. CMP pads comprising novel groove designs are also described. For example, described here are CMP pads comprising concentric circular grooves and axially curved grooves, reverse logarithmic grooves, overlapping circular grooves, lassajous groves, double spiral grooves, and multiply overlapping axially curved grooves. The CMP pads may be made from polyurethane, and the grooves produced therein may be made by a method from the group consisting of silicone lining, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

摘要翻译： 提供了用于在CMP垫中产生原位凹槽的方法。 通常，用于制造原位槽的方法包括将硅衬里图案化，将硅衬里放置在模具中或模具上，将CMP衬垫材料添加到硅衬里，并允许CMP垫固化的步骤。 还描述了包括新颖凹槽设计的CMP垫。 例如，这里描述的是包括同心圆形槽和轴向弯曲槽，反向对数槽，重叠圆形槽，拉索格，双螺旋槽和多重重叠的轴向曲线槽的CMP垫。 CMP垫可以由聚氨酯制成，并且其中产生的凹槽可以由以下方法制成：由硅胶衬里，激光书写，水射流切割，3-D印刷，热成型，真空成型，微接触印刷， 热冲压及其混合物。

公开(公告)号：US20060276109A1

公开(公告)日：2006-12-07

申请号：US11251547

申请日：2005-10-14

申请人： Pradip Roy ,  Manish Deopura ,  Sudhanshu Misra

发明人： Pradip Roy ,  Manish Deopura ,  Sudhanshu Misra

IPC分类号： B24B7/30 ,  B24D11/00

CPC分类号： B24D7/14 ,  B24B37/042 ,  B24B37/20 ,  B24B37/26 ,  B24B49/02 ,  B24B53/017 ,  B33Y10/00

摘要： The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior themo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.

摘要翻译： 本申请涉及用于基板的化学机械平面化（CMP）的抛光垫及其制造和使用方法。 本发明中描述的焊盘定制为抛光规格，其中规格包括（但不限于）被抛光材料，芯片设计和结构，芯片密度和图案密度，设备平台和使用的浆料类型。 这些焊盘可以设计成具有长或短范围顺序的专门的聚合物纳米结构，其允许分子水平调谐实现优异的机械特性。 更具体地，可以设计和制造焊盘，使得焊盘内的化学和物理性质均匀和不均匀的空间分布。 此外，这些垫可以被设计成通过表面工程，通过添加固体润滑剂来调节摩擦系数，并且产生具有形成与抛光表面平行的界面的多层聚合材料的低剪切整体垫。 焊盘还可以具有受控的孔隙率，嵌入式研磨剂，抛光表面上的新型凹槽，用于原位生产的浆料输送，以及用于端点检测的透明区域。

公开(公告)号：US20060189269A1

公开(公告)日：2006-08-24

申请号：US11060898

申请日：2005-02-18

申请人： Pradip Roy ,  Manish Deopura ,  Sudhanshu Misra

发明人： Pradip Roy ,  Manish Deopura ,  Sudhanshu Misra

IPC分类号： B24D11/00

CPC分类号： B24B37/24 ,  B24D18/00

摘要： Various examples of customized polishing pads are given, along with methods of making and using such customized polishing pads. The subject customized pads are designed and fabricated so that there is spatial distribution of chemical and physical properties of the pads that are customized for performance suited to a specific type of substrate, as well as fabrication control in implementing such customized design. Such customized design and fabrication control produce a monolithic pad thereby specifically suited to provide uniform performance of CMP of the targeted substrate.

摘要翻译： 给出了定制抛光垫的各种示例，以及制造和使用这种定制的抛光垫的方法。 主题定制垫被设计和制造，使得针对特定类型的衬底的性能而定制的衬垫的化学和物理性质的空间分布以及实​​现这种定制设计的制造控制。 这种定制的设计和制造控制产生单块焊盘，从而特别适合于提供目标衬底的CMP的均匀性能。

公开(公告)号：US20080090498A1

公开(公告)日：2008-04-17

申请号：US11998196

申请日：2007-11-28

申请人： Sudhanshu Misra ,  Pradip Roy

发明人： Sudhanshu Misra ,  Pradip Roy

IPC分类号： B24D3/20

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B37/20 ,  B24B49/02

摘要： A polishing pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure is a chip formed on a semiconductor wafer, the one or more characteristics of the structure can include chip size, pattern density, chip architecture, film material, film topography, and the like. Based on the one or more characteristics of the structure, a value for the one or more chemical or physical properties of the pad is selected. For example, the one or more chemical or physical properties of the pad can include pad material hardness, thickness, surface grooving, pore size, porosity, Youngs modulus, compressibility, asperity, and the like.

公开(公告)号：US20050009448A1

公开(公告)日：2005-01-13

申请号：US10810070

申请日：2004-03-25

申请人： Sudhanshu Misra ,  Pradip Roy

发明人： Sudhanshu Misra ,  Pradip Roy

IPC分类号： B24B37/04 ,  B24B49/02 ,  B24B53/007 ,  B24B49/00 ,  B24B1/00 ,  B24B7/19

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B37/20 ,  B24B49/02

摘要： A polishing pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure is a chip formed on a semiconductor wafer, the one or more characteristics of the structure can include chip size, pattern density, chip architecture, film material, film topography, and the like. Based on the one or more characteristics of the structure, a value for the one or more chemical or physical properties of the pad is selected. For example, the one or more chemical or physical properties of the pad can include pad material hardness, thickness, surface grooving, pore size, porosity, Youngs modulus, compressibility, asperity, and the like.

摘要翻译： 通过在衬底上获得结构的一个或多个特性来定制用于衬底上的膜的化学机械平坦化的抛光垫。 例如，当结构是形成在半导体晶片上的芯片时，结构的一个或多个特性可以包括芯片尺寸，图案密度，芯片结构，薄膜材料，薄膜形貌等。 基于结构的一个或多个特性，选择垫的一种或多种化学或物理性质的值。 例如，衬垫的一种或多种化学或物理性质可以包括衬垫材料硬度，厚度，表面开槽，孔径，孔隙率，杨氏模量，可压缩性，粗糙度等。

公开(公告)号：US20070059340A1

公开(公告)日：2007-03-15

申请号：US11530633

申请日：2006-09-11

申请人： Anthony Bello ,  Norbert Gimmler ,  Pradip Roy

发明人： Anthony Bello ,  Norbert Gimmler ,  Pradip Roy

IPC分类号： A61K47/00 ,  A61K31/22

CPC分类号： A61K31/22 ,  A21D2/16 ,  A23L7/117 ,  A23L7/122 ,  A23L7/126 ,  A23L19/05 ,  A23L19/18 ,  A23L33/12 ,  A23P20/10 ,  A23V2002/00 ,  A23V2200/224 ,  A23V2250/1882 ,  A23V2250/548 ,  A23V2250/1868 ,  A23V2250/187

摘要： Disclosed are processes for stabilizing omega-3 fatty acids for use in food products. The processes permit creation of a variety of food forms and food ingredients that contain omega-3 fatty acids like docosahexaenoic acid and eicosapentaenoic acid wherein these foods and food forms are stable for months without developing fishy aromas or tastes. This stability enables the incorporation of omega-3 fatty acids into food forms such as ready to eat cereals, trail mixes, chips, granola bars, toaster pastries, baked goods, cookies, crackers, fruit pieces and fruit leathers. The processes utilize a zein coating to protect and stabilize the omega-3 fatty acids.

摘要翻译： 公开了用于稳定用于食品中的ω-3脂肪酸的方法。 该方法允许产生各种食物形式和含有ω-3脂肪酸如二十二碳六烯酸和二十碳五烯酸的食物成分，其中这些食物和食品形式在几个月内稳定而不产生鱼腥味或口味。 这种稳定性使得可以将ω-3脂肪酸掺入食物形式，例如准备食用的谷物，小麦混合物，薯条，格兰诺拉麦片棒，烤面包机，烘焙食品，饼干，饼干，水果和果皮。 该方法利用玉米醇溶蛋白涂层来保护和稳定ω-3脂肪酸。

公开(公告)号：US20060013925A1

公开(公告)日：2006-01-19

申请号：US11180238

申请日：2005-07-13

申请人： Michael Bauman ,  Pradip Roy ,  Nirmal Sinha ,  Meena Sinha

发明人： Michael Bauman ,  Pradip Roy ,  Nirmal Sinha ,  Meena Sinha

IPC分类号： A23B7/16

CPC分类号： A23B7/0205 ,  A23B7/02 ,  A23B7/022 ,  A23B7/0408 ,  A23B7/148 ,  A23B7/16 ,  A23L19/03 ,  A23P30/32 ,  A23P30/36

摘要： A method is disclosed for preparing an expanded, vacuum puffed, dried fruit product. The method includes infusing the fruit with a low Brix infusion solution and then expanding the fruit by subjecting it to a vacuum at elevated temperature followed by drying of the fruit under a vacuum at elevated temperature and finally cooling of the fruit under lowered temperature while maintaining the vacuum. The product produced by the method is light, crisp, and has a low water activity and a low buoyant density.

摘要翻译： 公开了一种用于制备膨胀的，真空膨化的干果产品的方法。 该方法包括用低白利糖度输注溶液灌注水果，然后通过在高温下进行真空使其膨胀，然后在高温下在真空下干燥果实，并最终在降低温度下冷却果实，同时保持水果 真空。 该方法生产的产品质轻，脆，水分活性低，浮力低。