Silicon-germanium thin layer semiconductor structure with variable silicon-germanium composition and method of fabrication
    3.
    发明申请
    Silicon-germanium thin layer semiconductor structure with variable silicon-germanium composition and method of fabrication 审中-公开
    具有可变硅 - 锗组成的硅 - 锗薄层半导体结构及其制造方法

    公开(公告)号:US20050199872A1

    公开(公告)日:2005-09-15

    申请号:US10797425

    申请日:2004-03-10

    摘要: A SiGe thin layer semiconductor structure containing a substrate having a dielectric layer, a variable composition SixGe1-x layer on dielectric layer, and a Si cap layer on the variable composition SixGe1-x layer. The variable composition SixGe1-x layer can contain a SixGe1-x layer with a graded Ge content or a plurality of SixGe1-x sub-layers each with different Ge content. In one embodiment of the invention, the SiGe thin layer semiconductor structure contains a semiconductor substrate having a dielectric layer, a Si-containing seed layer on the dielectric layer, a variable composition SixGe1-x layer on the seed layer, and a Si cap layer on the variable composition SixGe1-x layer. A method and processing tool for fabricating the SiGe thin layer semiconductor structure are also provided.

    摘要翻译: SiGe薄层半导体结构,其包含在电介质层上具有电介质层,可变成分Si x 1 Ge 1-x层的衬底和可变组件上的Si覆盖层 组合物Si 1 x 1-x <&gt;层。 可变成分Si x 1 Ge 1-x层可以含有Si x N 1 Ge 1-x层,其中a 分级的Ge含量或多个具有不同Ge含量的Si x 1 Ge 1-x N sub子层。 在本发明的一个实施例中,SiGe薄层半导体结构包含具有电介质层的半导体衬底,介电层上的含Si种子层,可变成分Si x Si -x 层,以及可变成分Si x 1 Ge 1-x层上的Si覆盖层。 还提供了一种用于制造SiGe薄层半导体结构的方法和处理工具。

    Sequential oxide removal using fluorine and hydrogen
    5.
    发明申请
    Sequential oxide removal using fluorine and hydrogen 失效
    使用氟和氢进行连续的氧化物去除

    公开(公告)号:US20070238302A1

    公开(公告)日:2007-10-11

    申请号:US11393736

    申请日:2006-03-31

    IPC分类号: H01L21/461 H01L21/302

    摘要: A method is provided for oxide removal from a substrate. The method includes providing the substrate in a process chamber where the substrate has an oxide layer formed thereon, and performing a sequential oxide removal process. The sequential oxide removal process includes exposing the substrate at a first substrate temperature to a flow of a first etching gas containing F2 to partially remove the oxide layer from the substrate, raising the temperature of the substrate from the first substrate temperature to a second substrate temperature, and exposing the substrate at the second temperature to a flow of a second etching gas containing H2 to further remove the oxide layer from the substrate. In one embodiment, a film may be formed on the substrate following the sequential oxide removal process.

    摘要翻译: 提供了从基板去除氧化物的方法。 该方法包括在基板具有形成在其上的氧化物层的处理室中提供基板,并且执行顺序的氧化物去除工艺。 顺序氧化物去除工艺包括将衬底在第一衬底温度下暴露于含有F 2 N的第一蚀刻气体的流动以从衬底部分地去除氧化物层,从而将衬底的温度从 将第一衬底温度升至第二衬底温度,并将衬底在第二温度下暴露于含有H 2 N 2的第二蚀刻气体的流动,以进一步从衬底去除氧化物层。 在一个实施例中,可以在顺序氧化物去除工艺之后在衬底上形成膜。

    Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
    6.
    发明申请
    Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor 有权
    微特征填充方法和使用六氯二硅烷或其他含氯硅前体的装置

    公开(公告)号:US20060160288A1

    公开(公告)日:2006-07-20

    申请号:US11035730

    申请日:2005-01-18

    IPC分类号: H01L21/8234

    摘要: A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3 gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).

    摘要翻译: 提供了一种用于在处理系统中通过低压沉积工艺在衬底上的微特征中沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底,并将六氯二硅烷(HCD)工艺气体暴露于衬底,可以在微特征中形成含硅膜。 提供了一种包含用于使用诸如HCD处理气体的含硅气体和含氯气体在微特征中形成含硅膜的处理系统的处理工具。 或者,微特征可以暴露于DCS,SiCl 4和SiHCl 3气体。 或者,微特征可以暴露于(SiH 4+ + HCl)。

    Interrupted deposition process for selective deposition of Si-containing films
    7.
    发明申请
    Interrupted deposition process for selective deposition of Si-containing films 审中-公开
    用于选择性沉积含Si膜的中断沉积工艺

    公开(公告)号:US20070048956A1

    公开(公告)日:2007-03-01

    申请号:US11213871

    申请日:2005-08-30

    IPC分类号: H01L21/331

    摘要: A method is provided for selectively forming a Si-containing film on a substrate in an interrupted deposition process. The method includes providing a substrate containing a growth surface and a non-growth surface, and selectively forming the Si-containing film on the growth surface by exposing the substrate to HX gas while simultaneously exposing the substrate to a pulse of chlorinated silane gas. The Si-containing film can be a Si film or a SiGe film that is selectively formed on a Si or SiGe growth surface but not on an oxide, nitride, or oxynitride non-growth surface.

    摘要翻译: 提供了一种在中断沉积工艺中在衬底上选择性地形成含Si膜的方法。 该方法包括提供含有生长表面和非生长表面的基底,并且通过将基底暴露于HX气体同时将基底暴露于氯化硅烷气体脉冲,从而在生长表面上选择性地形成含Si膜。 含Si膜可以是选择性地在Si或SiGe生长表面上形成但不在氧化物,氮化物或氮氧化物非生长表面上的Si膜或SiGe膜。

    Low temperature formation of patterned epitaxial Si containing films
    8.
    发明申请
    Low temperature formation of patterned epitaxial Si containing films 失效
    图案外延含Si薄膜的低温形成

    公开(公告)号:US20070042569A1

    公开(公告)日:2007-02-22

    申请号:US11206059

    申请日:2005-08-18

    IPC分类号: H01L21/20 H01L21/36

    摘要: A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

    摘要翻译: 一种在低温下在半导体结构上有选择地形成外延含Si膜的方法。 该方法包括在处理室中提供结构,该结构包含具有外延Si表面积的Si衬底和其上的图案化膜区域。 将Si膜非选择性地沉积到该结构上,该Si膜包含沉积在外延Si表面上的外延Si膜和沉积在图案化膜的暴露表面上的非外延Si膜。 非外延Si膜被选择性地干蚀刻去除以形成图案化的外延Si膜。 Si膜可以是SiGe膜。

    Low-temperature oxide removal using fluorine
    9.
    发明申请
    Low-temperature oxide removal using fluorine 审中-公开
    使用氟的低温氧化物去除

    公开(公告)号:US20070039924A1

    公开(公告)日:2007-02-22

    申请号:US11206056

    申请日:2005-08-18

    摘要: A method and system for processing a substrate includes providing the substrate in a process chamber, the substrate having an oxide layer formed thereon, and exposing the substrate to an etching gas containing F2 gas at a first temperature to remove the oxide layer from the substrate. The substrate may subsequently be heated to a second temperature greater than the first temperature, and a film may then be formed on the substrate at the second temperature. In one embodiment, a Si film is epitaxially formed on a Si substrate.

    摘要翻译: 一种用于处理衬底的方法和系统包括在处理室中提供衬底,衬底具有形成在其上的氧化物层,并将衬底暴露于含有第一温度的F 2气体的蚀刻气体至 从基板上去除氧化层。 随后将衬底加热到​​大于第一温度的第二温度,然后可以在第二温度下在衬底上形成膜。 在一个实施例中,在Si衬底上外延形成Si膜。