发明申请
- 专利标题： High-density plasma hydrogenation
- 专利标题（中）： 高密度等离子体氢化
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申请号： US11013605申请日： 2004-12-15
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公开(公告)号： US20050202652A1公开(公告)日： 2005-09-15
- 发明人: Pooran Joshi , Apostolos Voutsas , John Hartzell
- 申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; B05D5/12 ; C23C16/24 ; C23C16/455 ; C23C16/509 ; C30B1/00 ; H01L21/00 ; H01L21/04 ; H01L21/20 ; H01L21/205 ; H01L21/31 ; H01L21/316 ; H01L21/36 ; H01L21/42 ; H01L21/469 ; H01L29/47 ; H01L29/786
摘要：
A high-density plasma hydrogenation method is provided. Generally, the method comprises: forming a silicon (Si)/oxide stack layer; plasma oxidizing the Si/oxide stack at a temperature of less than 400° C., using a high density plasma source, such as an inductively coupled plasma (ICP) source; introducing an atmosphere including H2 at a system pressure up to 500 milliTorr; hydrogenating the stack at a temperature of less than 400 degrees C., using the high density plasma source; and forming an electrode overlying the oxide. The electrode may be formed either before or after the hydrogenation. The Si/oxide stack may be formed in a number of ways. In one aspect, a Si layer is formed, and the silicon layer is plasma oxidized at a temperature of less than 400 degrees C., using an ICP source. The oxide formation, additional oxidation, and hydrogenation steps can be conducted in-situ in a common chamber.
公开/授权文献
- US07446023B2 High-density plasma hydrogenation 公开/授权日：2008-11-04
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