发明申请
- 专利标题： Method for front end of line fabrication
- 专利标题（中）： 前端制造方法
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申请号： US11137609申请日： 2005-05-24
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公开(公告)号： US20050205110A1公开(公告)日： 2005-09-22
- 发明人: Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
- 申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; C23C16/455 ; C23F1/00 ; H01J37/32 ; H01L21/00 ; H01L21/302 ; H01L21/3065 ; H01L21/3205 ; H01L21/8238 ; H01L23/12 ; H01L23/52 ; C25F1/00
摘要：
A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
公开/授权文献
- US07396480B2 Method for front end of line fabrication 公开/授权日：2008-07-08