发明申请
- 专利标题: Phase random access memory with high density
- 专利标题(中): 高密度相位随机存取存储器
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申请号: US11177115申请日: 2005-07-08
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公开(公告)号: US20050247922A1公开(公告)日: 2005-11-10
- 发明人: Hyung-Rok Oh , Beak-Hyung Cho , Du-Eung Kim , Woo-Yeong Cho
- 申请人: Hyung-Rok Oh , Beak-Hyung Cho , Du-Eung Kim , Woo-Yeong Cho
- 优先权: KR2003-36089 20030604
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; G11B7/24 ; G11C11/56 ; G11C16/02 ; H01L27/10 ; H01L27/105 ; H01L27/24 ; H01L29/76 ; H01L45/00 ; H01L47/00
摘要:
A phase random access memory including a plurality of access transistors, each access transistor including a drain region, and a phase-changeable film shared by the plurality of access transistors. The phase-changeable film is connected to a bitline through a first electrode and connected to each respective drain region through at least one of a plurality of second electrodes.
公开/授权文献
- US07838862B2 Phase random access memory with high density 公开/授权日:2010-11-23