发明申请
US20050258491A1 Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxides
审中-公开
具有高介电常数栅氧化物的场效应晶体管的阈值和平带电压稳定层
- 专利标题: Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxides
- 专利标题(中): 具有高介电常数栅氧化物的场效应晶体管的阈值和平带电压稳定层
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申请号: US10845719申请日: 2004-05-14
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公开(公告)号: US20050258491A1公开(公告)日: 2005-11-24
- 发明人: Nestor Bojarczuk , Eduard Cartier , Martin Frank , Evgeni Gousev , Supratik Guha , Vijay Narayanan
- 申请人: Nestor Bojarczuk , Eduard Cartier , Martin Frank , Evgeni Gousev , Supratik Guha , Vijay Narayanan
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/28 ; H01L21/8238 ; H01L27/088 ; H01L27/092 ; H01L29/49 ; H01L29/51 ; H01L29/76 ; H01L29/78 ; H01L29/786 ; H01L51/00 ; H01L51/05
摘要:
An insulating interlayer for use in complementary metal oxide semiconductor (CMOS) that prevents unwanted shifts in threshold voltage and flatband voltage is provided. The insulating interlayer is located between a gate dielectric having a dielectric constant of greater than 4.0 and a Si-containing gate conductor. The insulating interlayer of the present invention is any metal nitride, that optionally may include oxygen, that is capable of stabilizing the threshold and flatband voltages. In a preferred embodiment, the insulating interlayer is aluminum nitride or aluminum oxynitride and the gate dielectric is hafnium oxide, hafnium silicate or hafnium silicon oxynitride. The present invention is particularly useful in stabilizing the threshold and flatband voltage of p-type field effect transistors.