发明申请
- 专利标题： Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device
- 专利标题（中）： 表面发射半导体激光器，其制造方法和电子器件的制造方法
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申请号： US11143806申请日： 2005-06-02
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公开(公告)号： US20050271106A1公开(公告)日： 2005-12-08
- 发明人: Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
- 申请人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 优先权： JPP2004-166869 20040604
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/338 ; H01L29/778 ; H01L29/812 ; H01S5/00 ; H01S5/042 ; H01S5/18 ; H01S5/183 ; H01S5/22
摘要：
A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
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