公开(公告)号：US08409893B2

公开(公告)日：2013-04-02

申请号：US13356202

申请日：2012-01-23

申请人： Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

发明人： Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L21/00

CPC分类号： H01S5/227 ,  H01L33/24 ,  H01S5/22 ,  H01S5/223 ,  H01S5/3202

摘要： A convex part formation method of forming a convex part in parallel with a direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θU; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θD (where θD≠θU).

摘要翻译： 在具有{100}面作为其顶面的背衬上形成与背衬的<110>方向平行的凸部的凸部形成方法包括：（a） 110>方向在背面; （b）蚀刻背衬以便形成凸起部分上层，其在与{110}面相对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长，并且侧面 其表面具有倾斜度; U; （c）进一步蚀刻背衬，以便形成凸起部分的下层，其在与{110}面对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长;以及 其侧表面具有倾斜度; D（其中＆amp; D;≠＆thetas; U）。

公开(公告)号：US08058660B2

公开(公告)日：2011-11-15

申请号：US12208776

申请日：2008-09-11

申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/24 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/227 ,  H01S5/3203 ,  H01S2304/04

摘要： Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.

摘要翻译： 本发明公开了一种半导体发光器件，包括：（A）被配置为形成在具有{100}面作为主表面的基片的主表面上的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并通过外延生长形成在衬底的主表面上，下层沿平行于 衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。

公开(公告)号：US08030109B2

公开(公告)日：2011-10-04

申请号：US12540609

申请日：2009-08-13

申请人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

发明人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3235 ,  H01S5/343

摘要： A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.

摘要翻译： 能够实现长寿命的半导体发光元件及其制造方法。 活性层中的氢的杂质浓度为3×10 19 cm -3以下，活性层中的铝的杂质浓度为1×1018cm -3以下。 由此，能够抑制工作电流的增加，能够实现长寿命化。

公开(公告)号：US07438872B2

公开(公告)日：2008-10-21

申请号：US10507666

申请日：2003-12-26

申请人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yoshiaki Watanabe ,  Sadao Tanaka

发明人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yoshiaki Watanabe ,  Sadao Tanaka

IPC分类号： B01J19/00 ,  C23C16/00

CPC分类号： H01L21/67017 ,  H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/31662

摘要： A steam oxidation apparatus is provided which is capable of ensuring a desirable controllability and reproducibility of the steam oxidation of an object-to-be-oxidized housed in the reactor, by suppressing condensation of the steam in the steam-accompanied inert gas supplied to the reactor.The steam oxidation apparatus 78 is an apparatus used for forming the current confinement structure into the surface-emitting laser element by subjecting the high-Al-content layer to steam oxidation, and is equipped with a reactor 42 for the steam oxidation, a steam-accompanied inert gas system for supplying a steam-accompanied inert gas to the reactor 42, an inert gas system for supplying an inert gas to the reactor 42, a reactor bypass pipe 52 for allowing the steam-accompanied inert gas system and inert gas system to bypass the reactor, and an exhaust system for discharging exhaust gas from the reactor 42. The steam oxidation apparatus 78 is further equipped with a thermostatic oven 72 which houses the H2O bubbler 60, second gas pipe 68, automatic open/close valves 66A to 66D, a portion of the third gas pipe 70 in the vicinity of the automatic open/close valves 66A to 66D, and a portion of the gas inlet port 42A side of the reactor 42.

摘要翻译： 提供一种蒸汽氧化装置，其能够通过抑制供给到反应器的蒸汽伴随的惰性气体中的蒸汽的冷凝来确保反应器中容纳的被氧化物体的蒸汽氧化的期望的可控性和再现性 反应堆。 蒸汽氧化装置78是用于通过使高Al含量层进行蒸汽氧化将电流限制结构形成到表面发射激光元件中的装置，并且配备有用于蒸汽氧化的反应器42， 用于向反应器42供应伴随蒸汽的惰性气体的惰性气体系统，用于向反应器42供应惰性气体的惰性气体系统，用于允许伴随蒸汽的惰性气体系统和惰性气体系统的反应器旁通管52 绕过反应器，以及用于从反应器42排出废气的排气系统。 蒸汽氧化装置78还配备有恒温炉72，其容纳H 2 O 2起泡器60，第二气体管68，自动打开/关闭阀66A至66D，第三部分 自动打开/关闭阀66A至66D附近的气体管70和反应器42的气体入口42A侧的一部分。

公开(公告)号：US07332744B2

公开(公告)日：2008-02-19

申请号：US10983927

申请日：2004-11-08

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01L27/15 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下 以下，更优选为180nm以上。

公开(公告)号：US07026183B2

公开(公告)日：2006-04-11

申请号：US10917900

申请日：2004-08-13

申请人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

发明人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/935

摘要： For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

摘要翻译： 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是例如二甲基肼或氨（NH 3）。

公开(公告)号：US07001851B2

公开(公告)日：2006-02-21

申请号：US10871900

申请日：2004-06-18

申请人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiaki Watanabe

发明人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiaki Watanabe

IPC分类号： H01I21/31 ,  H01L21/469

CPC分类号： H01L21/02178 ,  C23C8/02 ,  C23C8/16 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31666

摘要： This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor and is subjected to: a first step of supplying N2 gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2 gas; a second step of stopping supply of the N2 gas and supplying a steam-accompanied N2 gas, in which the N2 gas is accompanied with steam, to the reactor; a third step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2 gas; and a fourth step of holding the semiconductor substrate for a predetermined time at 450° C.

摘要翻译： 本发明提供了一种具有适当可控性和再现性的待氧化物质的蒸汽氧化方法。 提供一种蒸汽氧化法，其中将半导体衬底（待氧化的物质）容纳在蒸汽氧化反应器中，并经受：向反应器壳体供应N 2气体的第一步骤 半导体衬底并用N 2气体代替反应器内部; 第二步骤是停止供应N 2气体并供应伴随着N 2气体的蒸气伴随的N 2气体，其中伴随着N 2气体 用蒸汽，到反应器; 在提供伴随蒸汽的N 2气体的同时，将半导体衬底的温度升高至450℃（蒸汽氧化温度）的第三步骤; 以及在450℃下将半导体衬底保持预定时间的第四步骤。

公开(公告)号：US20050271106A1

公开(公告)日：2005-12-08

申请号：US11143806

申请日：2005-06-02

申请人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

发明人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

IPC分类号： H01L21/316 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01S5/00 ,  H01S5/042 ,  H01S5/18 ,  H01S5/183 ,  H01S5/22

CPC分类号： H01S5/18388 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18394 ,  H01S2301/166

摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.

摘要翻译： 提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。 当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。 此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在p型Al 2 O 3上形成Al氧化物层， Ga 1-w作为p型DBR层的顶层的层，并形成像凹透镜的折射率分布。

公开(公告)号：US06960262B2

公开(公告)日：2005-11-01

申请号：US10486801

申请日：2003-06-17

申请人： Koji Sasaki ,  Hironobu Narui ,  Katsunori Yanashima ,  Akihiko Memezawa

发明人： Koji Sasaki ,  Hironobu Narui ,  Katsunori Yanashima ,  Akihiko Memezawa

IPC分类号： H05B33/10 ,  C23C14/12 ,  C23C14/24 ,  C23C16/455 ,  H01L51/50 ,  C23C16/00

CPC分类号： C23C14/228 ,  C23C14/12

摘要： A thin film formation apparatus by which source gas is supplied uniformly to the surface of a substrate so that an organic thin film of a uniform film thickness can be formed on the surface of the substrate. The thin film formation apparatus includes a vacuum chamber (11), a substrate holder (12) provided in the vacuum chamber (11), and a gas supplying end element (22) for supplying gas toward a substrate mounting face (12a) of the substrate holder (12). The gas supplying end element (22) is formed so as to supply the source gas in an elongated rectangular shape to the substrate mounting face (12a).

摘要翻译： 将源气体均匀地供给到基板的表面的薄膜形成装置，能够在基板的表面上形成均匀膜厚的有机薄膜。 薄膜形成装置包括真空室（11），设置在真空室（11）中的基板保持件（12）和用于向基板安装面（12a）供给气体的气体供给端部元件（22） 衬底保持器（12）。 气体供给端元件（22）形成为将细长的矩形形状的源气体供给到基板安装面（12a）。

公开(公告)号：US20050078726A1

公开(公告)日：2005-04-14

申请号：US10944386

申请日：2004-09-17

申请人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiyuki Tanaka

发明人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiyuki Tanaka

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/20 ,  H01S5/343 ,  H01S5/40 ,  H01S5/42

CPC分类号： B82Y20/00 ,  H01S5/02284 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/18344 ,  H01S5/34313 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/423 ,  H01S2301/166

摘要： A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.

摘要翻译： 通过简单的结构和制造工艺排列具有不同激光波长的多个垂直腔表面发射激光器件，而不增加器件电阻。 每个垂直腔表面发射激光器件包括包括有源层和电流限制层的分层结构。 层叠结构中的电流限制部分的面积对应于从每个垂直腔表面发射激光器件发射的激光的波长设定。 因此，多个垂直腔表面发射激光器件发射具有不同激光波长的激光。