Invention Application
- Patent Title: Ferroelectric material and ferroelectric memory device made therefrom
- Patent Title (中): 铁电材料和由其制成的铁电存储器件
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Application No.: US11150854Application Date: 2005-06-09
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Publication No.: US20050285171A1Publication Date: 2005-12-29
- Inventor: Tai-Bor Wu , Cheng-Lung Hung
- Applicant: Tai-Bor Wu , Cheng-Lung Hung
- Priority: TW093116892 20040611
- Main IPC: C04B35/491
- IPC: C04B35/491 ; H01L21/02 ; H01L21/316 ; H01L27/20 ; H01L29/51 ; H01L29/76
Abstract:
A ferroelectric material includes a compound of formula (I): (Pb1-x-zBazAx) (ByZr1-y)O3 (I) wherein 0≦x≦0.1, 0≦y≦0.020, 0.15≦z≦0.35, with the proviso that y≠0 when x=0, and that x≠0, when y=0; and wherein A is a first element having a valence number greater than that of Pb, and B is a second element having a valence number greater than that of Zr. A ferroelectric memory device made from the ferroelectric material is also disclosed.
Public/Granted literature
- US07307304B2 Ferroelectric materials and ferroelectric memory device made therefrom Public/Granted day:2007-12-11
Information query
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