发明申请
- 专利标题： PREVENTING DAMAGE TO INTERLEVEL DIELECTRIC
- 专利标题（中）： 防止对交流电介质的损害
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申请号： US11162883申请日： 2005-09-27
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公开(公告)号： US20070072412A1公开(公告)日： 2007-03-29
- 发明人: Derren Dunn , Nicholas Fuller , Catherine Labelle , Vincent McGahay , Sanjay Mehta , Henry Nye III
- 申请人： Derren Dunn , Nicholas Fuller , Catherine Labelle , Vincent McGahay , Sanjay Mehta , Henry Nye III
- 申请人地址： US Armonk US CA Sunnyvale
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,ADVANCED MICRO DEVICES, INC. (AMD)
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,ADVANCED MICRO DEVICES, INC. (AMD)
- 当前专利权人地址： US Armonk US CA Sunnyvale
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/311
摘要：
Prevention of damage to an interlevel dielectric (ILD) is provided by forming an opening (e.g., trench) in the ILD, and sputtering a dielectric film onto a sidewall of the opening by overetching into a layer of the dielectric below or within the ILD during forming of the opening. The re-sputtered film protects the sidewall of the opening from subsequent plasma/ash processes and seals the porous dielectric surface along the sidewall and bottom without impacting overall process throughput. A semiconductor structure resulting from the above process is also disclosed.
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