公开(公告)号：US20070072412A1

公开(公告)日：2007-03-29

申请号：US11162883

申请日：2005-09-27

申请人： Derren Dunn ,  Nicholas Fuller ,  Catherine Labelle ,  Vincent McGahay ,  Sanjay Mehta ,  Henry Nye III

发明人： Derren Dunn ,  Nicholas Fuller ,  Catherine Labelle ,  Vincent McGahay ,  Sanjay Mehta ,  Henry Nye III

IPC分类号： H01L21/4763 ,  H01L21/311

CPC分类号： H01L21/31138 ,  H01L21/02118 ,  H01L21/02123 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76831

摘要： Prevention of damage to an interlevel dielectric (ILD) is provided by forming an opening (e.g., trench) in the ILD, and sputtering a dielectric film onto a sidewall of the opening by overetching into a layer of the dielectric below or within the ILD during forming of the opening. The re-sputtered film protects the sidewall of the opening from subsequent plasma/ash processes and seals the porous dielectric surface along the sidewall and bottom without impacting overall process throughput. A semiconductor structure resulting from the above process is also disclosed.

摘要翻译： 通过在ILD中形成开口（例如，沟槽）来提供对层间电介质（ILD）的损坏的防止，并且通过在ILD内或在ILD内过度蚀刻到电介质层中，将电介质膜溅射到开口的侧壁上 形成开口。 再溅射的膜保护开口的侧壁不受后续的等离子体/灰分过程的影响，并且沿着侧壁和底部密封多孔电介质表面，而不影响整个工艺流程。 还公开了由上述方法得到的半导体结构。