公开(公告)号：US20070072412A1

公开(公告)日：2007-03-29

申请号：US11162883

申请日：2005-09-27

申请人： Derren Dunn ,  Nicholas Fuller ,  Catherine Labelle ,  Vincent McGahay ,  Sanjay Mehta ,  Henry Nye III

发明人： Derren Dunn ,  Nicholas Fuller ,  Catherine Labelle ,  Vincent McGahay ,  Sanjay Mehta ,  Henry Nye III

IPC分类号： H01L21/4763 ,  H01L21/311

CPC分类号： H01L21/31138 ,  H01L21/02118 ,  H01L21/02123 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76831

摘要： Prevention of damage to an interlevel dielectric (ILD) is provided by forming an opening (e.g., trench) in the ILD, and sputtering a dielectric film onto a sidewall of the opening by overetching into a layer of the dielectric below or within the ILD during forming of the opening. The re-sputtered film protects the sidewall of the opening from subsequent plasma/ash processes and seals the porous dielectric surface along the sidewall and bottom without impacting overall process throughput. A semiconductor structure resulting from the above process is also disclosed.

摘要翻译： 通过在ILD中形成开口（例如，沟槽）来提供对层间电介质（ILD）的损坏的防止，并且通过在ILD内或在ILD内过度蚀刻到电介质层中，将电介质膜溅射到开口的侧壁上 形成开口。 再溅射的膜保护开口的侧壁不受后续的等离子体/灰分过程的影响，并且沿着侧壁和底部密封多孔电介质表面，而不影响整个工艺流程。 还公开了由上述方法得到的半导体结构。

公开(公告)号：US20050269703A1

公开(公告)日：2005-12-08

申请号：US10709865

申请日：2004-06-02

申请人： Derren Dunn ,  Hyungjun Kim ,  Stephen Rossnagel ,  Soon-Cheon Seo

发明人： Derren Dunn ,  Hyungjun Kim ,  Stephen Rossnagel ,  Soon-Cheon Seo

IPC分类号： H01L21/285 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/76846 ,  H01L21/28562 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl5). The invention generates a sharp interface between low-k materials and liner materials.

摘要翻译： 在低k材料上沉积氮化钽（TaN）扩散阻挡区域的方法。 所述方法包括通过从钽基前体和室中的氮等离子体进行等离子体增强原子层沉积（PE-ALD）在低k材料衬底上形成保护层。 保护层的氮含量大于其钽含量。 然后通过从钽基前体和包括氢和氮的等离子体中进行PE-ALD形成基本上化学计量的氮化钽层。 本发明还包括如此形成的氮化钽 - 氮化物扩散阻挡区域。 在一个实施方案中，金属前体包括五氯化钽（TaCl 5 N 5）。 本发明在低k材料和衬垫材料之间产生尖锐的界面。

公开(公告)号：US20060098862A1

公开(公告)日：2006-05-11

申请号：US10904434

申请日：2004-11-10

申请人： James Demarest ,  Kaushik Chanda ,  Derren Dunn ,  Yun-Yu Wang

发明人： James Demarest ,  Kaushik Chanda ,  Derren Dunn ,  Yun-Yu Wang

IPC分类号： G06K9/00

CPC分类号： G01N21/9501

摘要： Fail sites in a semiconductor are isolated through a difference image of a fail area and a healthy area. The fail area comprises an image of a semiconductor with a fail. The healthy area comprises an image of a semiconductor absent the fail or, in other words, an image of a semiconductor with healthy structure. Instructions cause a variation in the intensities of the difference image to appear at the fail site.

摘要翻译： 通过故障区域和健康区域的差异图像隔离半导体中的故障点。 故障区域包括具有故障的半导体的图像。 健康区域包括没有失败的半导体图像，换句话说，包括具有健康结构的半导体的图像。 说明会导致差异图像强度的变化出现在故障现场。

公开(公告)号：US20070148958A1

公开(公告)日：2007-06-28

申请号：US11499220

申请日：2006-08-04

申请人： Lawrence Clevenger ,  Stefanie Chiras ,  Timothy Dalton ,  James Demarest ,  Derren Dunn ,  Chester Dziobkowski ,  Philip Flaitz ,  Michael Lane ,  James Lloyd ,  Darryl Restaino ,  Thomas Shaw ,  Yun-Yu Wang ,  Chih-Chao Yang

发明人： Lawrence Clevenger ,  Stefanie Chiras ,  Timothy Dalton ,  James Demarest ,  Derren Dunn ,  Chester Dziobkowski ,  Philip Flaitz ,  Michael Lane ,  James Lloyd ,  Darryl Restaino ,  Thomas Shaw ,  Yun-Yu Wang ,  Chih-Chao Yang

IPC分类号： H01L21/4763

CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx- or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

摘要翻译： 一种互连结构，其中上层低k介电材料（例如包含Si，C，O和H的元素的材料）与下面的扩散覆盖电介质（例如包含C，Si元素的材料）之间的粘合 通过在两个电介质层之间引入粘附过渡层来改善N和H。 在上层低k电介质和扩散阻挡覆盖电介质之间的粘附过渡层的存在可以减少在包装过程中互连结构的分层的可能性。 本文提供的粘合过渡层包括含低级SiO x - 或SiON的区域和上C级分区域。 还提供了形成这种结构，特别是粘附过渡层的方法。

公开(公告)号：US20050230831A1

公开(公告)日：2005-10-20

申请号：US10827693

申请日：2004-04-19

申请人： Lawrence Clevenger ,  Stefanie Chiras ,  Timothy Dalton ,  James Demarest ,  Derren Dunn ,  Chester Dziobkowski ,  Philip Flaitz ,  Michael Lane ,  James Lloyd ,  Darryl Restaino ,  Thomas Shaw ,  Yun-Yu Wang ,  Chih-Chao Yang

发明人： Lawrence Clevenger ,  Stefanie Chiras ,  Timothy Dalton ,  James Demarest ,  Derren Dunn ,  Chester Dziobkowski ,  Philip Flaitz ,  Michael Lane ,  James Lloyd ,  Darryl Restaino ,  Thomas Shaw ,  Yun-Yu Wang ,  Chih-Chao Yang

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx— or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

摘要翻译： 一种互连结构，其中上层低k介电材料（例如包含Si，C，O和H的元素的材料）与下面的扩散覆盖电介质（例如包含C，Si元素的材料）之间的粘合 通过在两个电介质层之间引入粘附过渡层来改善N和H。 在上层低k电介质和扩散阻挡覆盖电介质之间的粘附过渡层的存在可以减少在包装过程中互连结构的分层的可能性。 本文提供的粘合过渡层包括含低级SiO x - 或SiON的区域和上C级分区域。 还提供了形成这种结构，特别是粘附过渡层的方法。