Invention Application
- Patent Title: Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method
- Patent Title (中): 光检测器包括单片集成跨阻放大器和评估电子器件,以及生产方法
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Application No.: US10596035Application Date: 2004-12-06
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Publication No.: US20070164393A1Publication Date: 2007-07-19
- Inventor: Konrad Bach , Alexander Hoelke , Uwe Eckoldt , Wolfgang Einbrodt , Karl-Ulrich Stahl
- Applicant: Konrad Bach , Alexander Hoelke , Uwe Eckoldt , Wolfgang Einbrodt , Karl-Ulrich Stahl
- Applicant Address: DE ERFURT 99097 DE ERFURT 99097
- Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG,MELEXIS GMBH
- Current Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG,MELEXIS GMBH
- Current Assignee Address: DE ERFURT 99097 DE ERFURT 99097
- Priority: DE10357135.3 20031206
- International Application: PCT/DE04/02672 WO 20041206
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
The aim of the invention is to configure a photodetector (10) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evalation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component (20) is assigned to the chip face onto which the light preferably falls. Electronic circuit components (30) are arranged on the opposite chip face. Electrical connections (40) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.
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