- 专利标题： INTEGRATED CIRCUIT CAPACITOR STRUCTURE
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申请号： US11733711申请日： 2007-04-10
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公开(公告)号： US20070184610A1公开(公告)日： 2007-08-09
- 发明人: Kyoung-woo Lee , Wan-jae Park , Jeong-hoon Ahn , Kyung-tae Lee , Mu-kyeng Jung , Yong-jun Lee , Il-goo Kim , Soo-geun Lee
- 申请人： Kyoung-woo Lee , Wan-jae Park , Jeong-hoon Ahn , Kyung-tae Lee , Mu-kyeng Jung , Yong-jun Lee , Il-goo Kim , Soo-geun Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR2002-63477 20021017; KR2003-3296 20030117
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L21/20
摘要：
Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.
公开/授权文献
- US07560332B2 Integrated circuit capacitor structure 公开/授权日：2009-07-14
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