发明申请
- 专利标题: METHOD FOR CLEANING POST-ETCH NOBLE METAL RESIDUES
- 专利标题(中): 清除后处理金属残留物的方法
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申请号: US11669759申请日: 2007-01-31
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公开(公告)号: US20070298521A1公开(公告)日: 2007-12-27
- 发明人: Yaw S. Obeng , Kezhakkedath R. Udayakumar , Scott Robert Summerfelt , Sanjeev Aggarwal , Francis Gabriel Celii , Lindsey H. Hall , Robert Kraft , Theodore S. Moise
- 申请人: Yaw S. Obeng , Kezhakkedath R. Udayakumar , Scott Robert Summerfelt , Sanjeev Aggarwal , Francis Gabriel Celii , Lindsey H. Hall , Robert Kraft , Theodore S. Moise
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of manufacturing a semiconductor device is presented. In one aspect, the method comprises forming conductive and ferroelectric material layers on a semiconductor substrate. The material layers are patterned to form electrodes and a ferroelectric layer of a ferroelectric capacitor, wherein a conductive noble metal-containing polymer is generated on sidewalls of the ferroelectric capacitor. The method also comprises converting the conductive noble metal-containing polymer into a non-conducting metal oxide. Converting includes forming a water-soluble metal salt from the conductive noble metal-containing polymer and reacting the water-soluble metal salt with an acqueous acidic solution to form a metal hydroxide. Converting also includes oxidizing the metal hydroxide to form the non-conducting metal oxide.
公开/授权文献
- US07723199B2 Method for cleaning post-etch noble metal residues 公开/授权日:2010-05-25