发明申请
- 专利标题: METHOD OF DEPOSITING SILICON WITH HIGH STEP COVERAGE
- 专利标题(中): 沉积具有高阶覆盖层的硅的方法
-
申请号: US11853400申请日: 2007-09-11
-
公开(公告)号: US20080003763A1公开(公告)日: 2008-01-03
- 发明人: Ivo Raaijmakers , Christophe Pomarede , Cornelius Jeugd , Alexander Gschwandtner , Andreas Grassi
- 申请人: Ivo Raaijmakers , Christophe Pomarede , Cornelius Jeugd , Alexander Gschwandtner , Andreas Grassi
- 申请人地址: US AZ Phoenix
- 专利权人: ASM America, Inc.
- 当前专利权人: ASM America, Inc.
- 当前专利权人地址: US AZ Phoenix
- 主分类号: H01L21/334
- IPC分类号: H01L21/334
摘要:
A method is disclosed for depositing silicon with high deposition rates and good step coverage. The process is performed at high pressures, including close to atmospheric pressures, at temperatures of greater than about 650° C. Silane and hydrogen are flowed over a substrate in a single-wafer chamber. Advantageously, the process maintains good step coverage and high deposition rates (e.g., greater that 50 nn/min) even when dopant gases are added to the process, resulting in commercially practicable rates of deposition for conductive silicon. Despite the high deposition rates, step coverage is sufficient to deposit polysilicon into extremely deep trenches and vias with aspect ratios as high as 40:1, filling such structures without forming voids or keyholes.