公开(公告)号：US20080003763A1

公开(公告)日：2008-01-03

申请号：US11853400

申请日：2007-09-11

申请人： Ivo Raaijmakers ,  Christophe Pomarede ,  Cornelius Jeugd ,  Alexander Gschwandtner ,  Andreas Grassi

发明人： Ivo Raaijmakers ,  Christophe Pomarede ,  Cornelius Jeugd ,  Alexander Gschwandtner ,  Andreas Grassi

IPC分类号： H01L21/334

CPC分类号： C23C16/45504 ,  C23C16/045 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45591 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/76877 ,  H01L29/66181 ,  H01L29/78

摘要： A method is disclosed for depositing silicon with high deposition rates and good step coverage. The process is performed at high pressures, including close to atmospheric pressures, at temperatures of greater than about 650° C. Silane and hydrogen are flowed over a substrate in a single-wafer chamber. Advantageously, the process maintains good step coverage and high deposition rates (e.g., greater that 50 nn/min) even when dopant gases are added to the process, resulting in commercially practicable rates of deposition for conductive silicon. Despite the high deposition rates, step coverage is sufficient to deposit polysilicon into extremely deep trenches and vias with aspect ratios as high as 40:1, filling such structures without forming voids or keyholes.

摘要翻译： 公开了一种用于沉积具有高沉积速率和良好的台阶覆盖率的硅的方法。 该方法在大于约650℃的温度下在高压（包括接近大气压）下进行。硅烷和氢气在单晶片室中流过衬底。 有利的是，即使将掺杂剂气体加入到该方法中，该方法保持良好的阶梯覆盖率和高的沉积速率（例如，大于50nn / min），从而导致商业上可行的导电硅沉积速率。 尽管沉积速率高，但步长覆盖足以将多晶硅沉积到具有高达40:1的纵横比的极深沟槽和通孔中，填充这种结构而不形成空隙或键孔。

公开(公告)号：US20080286589A1

公开(公告)日：2008-11-20

申请号：US12167506

申请日：2008-07-03

申请人： Eric J. Shero ,  Christophe Pomarede

发明人： Eric J. Shero ,  Christophe Pomarede

IPC分类号： B32B15/20

CPC分类号： H01L21/28185 ,  C23C16/308 ,  C23C16/452 ,  C23C16/455 ,  H01L21/28017 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31683 ,  H01L21/318 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S438/932 ,  Y10T428/12021 ,  Y10T428/12458 ,  Y10T428/31678 ,  H01L2924/00

摘要： A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface, making the layer particularly suitable for transistor gate dielectric applications. The methods of formation include low temperature processes, particularly CVD using a remote plasma generator and atomic layer deposition using selective incorporation of nitrogen in the cyclic process. Advantageously, nitrogen levels are tailored during the deposition process and temperatures are low enough to avoid interdiffusion and allow maintenance of the desired impurity profile.

摘要翻译： 公开了一种高k电介质膜及其形成方法。 高k材料包括杂质浓度，特别是氮的两个峰，例如在较低界面和上界面处，使得该层特别适用于晶体管栅极介电应用。 形成方法包括低温​​工艺，特别是使用远程等离子体发生器的CVD和使用在循环过程中选择性掺入氮的原子层沉积。 有利地，在沉积过程中调整氮含量，并且温度足够低以避免相互扩散并允许维持期望的杂质分布。

公开(公告)号：US06806145B2

公开(公告)日：2004-10-19

申请号：US10227475

申请日：2002-08-22

申请人： Suvi Haukka ,  Eric Shero ,  Christophe Pomarede ,  Jan Willem Hub Maes ,  Marko Tuominen

发明人： Suvi Haukka ,  Eric Shero ,  Christophe Pomarede ,  Jan Willem Hub Maes ,  Marko Tuominen

IPC分类号： H01L21473

CPC分类号： H01L21/28185 ,  H01L21/02052 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/306 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention relates to methods for forming dielectric layers on a substrate, such as in an integrated circuit. In one aspect of the invention, a thin interfacial layer is formed. The interfacial layer is preferably an oxide layer and a high-k material is preferably deposited on the interfacial layer by a process that does not cause substantial further growth of the interfacial layer. For example, water vapor may be used as an oxidant source during high-k deposition at less than or equal to about 300° C.

摘要翻译： 本发明涉及在诸如集成电路中的衬底上形成电介质层的方法。 在本发明的一个方面，形成薄的界面层。 界面层优选是氧化物层，并且优选通过不会导致界面层的实质性进一步生长的方法在界面层上沉积高k材料。 例如，水蒸气可以在高k沉积期间以小于或等于约300℃的温度用作氧化剂源。

公开(公告)号：US06960537B2

公开(公告)日：2005-11-01

申请号：US10260370

申请日：2002-09-26

申请人： Eric J. Shero ,  Christophe Pomarede

发明人： Eric J. Shero ,  Christophe Pomarede

IPC分类号： C23C16/40 ,  C23C16/30 ,  C23C16/452 ,  C23C16/455 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  C23C16/308 ,  C23C16/452 ,  C23C16/455 ,  H01L21/28017 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31683 ,  H01L21/318 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S438/932 ,  Y10T428/12021 ,  Y10T428/12458 ,  Y10T428/31678 ,  H01L2924/00

摘要： A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface, making the layer particularly suitable for transistor gate dielectric applications. The methods of formation include low temperature processes, particularly CVD using a remote plasma generator and atomic layer deposition using selective incorporation of nitrogen in the cyclic process. Advantageously, nitrogen levels are tailored during the deposition process and temperatures are low enough to avoid interdiffusion and allow maintenance of the desired impurity profile.

公开(公告)号：US20050118837A1

公开(公告)日：2005-06-02

申请号：US10623482

申请日：2003-07-18

申请人： Michael Todd ,  Keith Weeks ,  Christiaan Werkhoven ,  Christophe Pomarede

发明人： Michael Todd ,  Keith Weeks ,  Christiaan Werkhoven ,  Christophe Pomarede

IPC分类号： C23C16/24 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/58 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45523 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185

摘要： Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.

摘要翻译： 在反应室中进行多个顺序的工艺以形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用丙硅烷作为硅前体在衬底上沉积硅层。 然后通过氮化硅层形成氮化硅层。 通过重复这些步骤，形成期望厚度的氮化硅层。

公开(公告)号：US20080038936A1

公开(公告)日：2008-02-14

申请号：US11877480

申请日：2007-10-23

申请人： Michael Todd ,  Keith Weeks ,  Christiaan Werkhoven ,  Christophe Pomarede

发明人： Michael Todd ,  Keith Weeks ,  Christiaan Werkhoven ,  Christophe Pomarede

IPC分类号： H01L21/469

CPC分类号： C23C16/45523 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185

摘要： Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.

摘要翻译： 在反应室中进行多个顺序的工艺以形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用丙硅烷作为硅前体在衬底上沉积硅层。 然后通过氮化硅层形成氮化硅层。 通过重复这些步骤，形成期望厚度的氮化硅层。

公开(公告)号：US20060205230A1

公开(公告)日：2006-09-14

申请号：US11431037

申请日：2006-05-09

申请人： Christophe Pomarede ,  Jeff Roberts ,  Eric Shero

发明人： Christophe Pomarede ,  Jeff Roberts ,  Eric Shero

IPC分类号： H01L21/31 ,  H01L21/324

CPC分类号： H01L21/28185 ,  C23C16/0218 ,  C23C16/0245 ,  C23C16/22 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/28017 ,  H01L21/28035 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/32055 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material. Preferably less than 10 Å of the bulk material incorporates the excited species, which can include fluorine, chlorine and particularly nitrogen excited species.

公开(公告)号：US07405453B2

公开(公告)日：2008-07-29

申请号：US11132096

申请日：2005-05-17

申请人： Eric J. Shero ,  Christophe Pomarede

发明人： Eric J. Shero ,  Christophe Pomarede

IPC分类号： H01L27/088

CPC分类号： H01L21/28185 ,  C23C16/308 ,  C23C16/452 ,  C23C16/455 ,  H01L21/28017 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31683 ,  H01L21/318 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S438/932 ,  Y10T428/12021 ,  Y10T428/12458 ,  Y10T428/31678 ,  H01L2924/00

摘要： A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface, making the layer particularly suitable for transistor gate dielectric applications. The methods of formation include low temperature processes, particularly CVD using a remote plasma generator and atomic layer deposition using selective incorporation of nitrogen in the cyclic process. Advantageously, nitrogen levels are tailored during the deposition process and temperatures are low enough to avoid interdiffusion and allow maintenance of the desired impurity profile.

摘要翻译： 公开了一种高k电介质膜及其形成方法。 高k材料包括杂质浓度，特别是氮的两个峰，例如在较低界面和上界面处，使得该层特别适用于晶体管栅极介电应用。 形成方法包括低温​​工艺，特别是使用远程等离子体发生器的CVD和使用在循环过程中选择性掺入氮的原子层沉积。 有利地，在沉积过程中调整氮含量，并且温度足够低以避免相互扩散并允许维持期望的杂质分布。

公开(公告)号：US20060211259A1

公开(公告)日：2006-09-21

申请号：US11087079

申请日：2005-03-21

申请人： Jan Maes ,  Hilde Witte ,  Christophe Pomarede

发明人： Jan Maes ,  Hilde Witte ,  Christophe Pomarede

IPC分类号： H01L21/336

CPC分类号： H01L21/28194 ,  C23C16/401 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45504 ,  C23C16/45525 ,  C23C16/482 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517

摘要： A method for forming an integrated circuit structure on a semiconductor substrate comprises depositing a high k gate dielectric material over the substrate using an atomic layer deposition process. A silicon oxide capping layer is deposited over the gate dielectric material in a rapid thermal chemical vapor deposition process. A gate electrode is formed over the silicon oxide capping layer.

摘要翻译： 一种用于在半导体衬底上形成集成电路结构的方法包括使用原子层沉积工艺在衬底上沉积高k栅极电介质材料。 在快速热化学气相沉积工艺中，在栅极电介质材料上沉积氧化硅覆盖层。 在氧化硅覆盖层上形成栅电极。

公开(公告)号：US20060110943A1

公开(公告)日：2006-05-25

申请号：US11212503

申请日：2005-08-24

申请人： Johan Swerts ,  Hilde De Witte ,  Jan Maes ,  Christophe Pomarede ,  Ruben Haverkort ,  Yuet Wan ,  Marinus De Blank ,  Cornelius Van Der Jeugd ,  Jacobus Beulens

发明人： Johan Swerts ,  Hilde De Witte ,  Jan Maes ,  Christophe Pomarede ,  Ruben Haverkort ,  Yuet Wan ,  Marinus De Blank ,  Cornelius Van Der Jeugd ,  Jacobus Beulens

IPC分类号： H01L21/31

CPC分类号： H01L21/28194 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/3185 ,  H01L29/518

摘要： A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and/or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH3. The excited species activates the NH3. The substrate is exposed to both the activated NH3 and the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NH3 and to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited N2 alone, or thermal nitridation using NH3 alone, with the same process temperatures and nitridation durations.

摘要翻译： 通过暴露于远程激发的物质而活化的氮前体被用作形成含氮层的反应物。 远程激发的物质可以是例如已经在微波自由基发生器中被激发的N 2，Ar和/或He。 微波自由基发生器下游和衬底上游，受激物质的流动与NH 3 3流混合。 激发的物质激活NH 3。 底物暴露于活化的NH 3和被激发的物质。 衬底也可以暴露于另一物质的前体，以在化学气相沉积中形成化合物层。 此外，已经沉积的层可以通过暴露于活化的NH 3和所激发的物质而被氮化，这导致使用激发的N 2 O 3的等离子体氮化导致更高的氮掺入水平， 单独使用NH 3或单独使用相同工艺温度和氮化持续时间的氮化。