发明申请
US20080116530A1 Semiconductor Devices Having Transistors with Different Gate Structures and Related Methods
审中-公开
具有不同栅极结构的晶体管的半导体器件及相关方法
- 专利标题： Semiconductor Devices Having Transistors with Different Gate Structures and Related Methods
- 专利标题（中）： 具有不同栅极结构的晶体管的半导体器件及相关方法
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申请号： US11855413申请日： 2007-09-14
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公开(公告)号： US20080116530A1公开(公告)日： 2008-05-22
- 发明人: Sang-jin Hyun , Si-young Choi , In-sang Jeon , Sang-bom Kang , Hye-min Kim
- 申请人： Sang-jin Hyun , Si-young Choi , In-sang Jeon , Sang-bom Kang , Hye-min Kim
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR2006-0115891 20061122
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/8238
摘要：
A semiconductor device may include a semiconductor substrate and first and second transistors. The first transistor may have a first gate structure on the semiconductor substrate, and the first gate structure may include a first gate insulating layer between a first gate electrode and the semiconductor substrate. The first gate insulating layer may include first and second dielectric materials with the second dielectric material having a greater dielectric constant than the first dielectric material. Moreover, the first gate electrode may be in contact with the second dielectric material. The second transistor may have a second gate structure on the semiconductor substrate, with the second gate structure including a second gate insulating layer between a second gate electrode and the semiconductor substrate. Related methods are also discussed.
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