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    Semiconductor Devices Having Transistors with Different Gate Structures and Related Methods
    7.
    发明申请
    Semiconductor Devices Having Transistors with Different Gate Structures and Related Methods 审中-公开
    具有不同栅极结构的晶体管的半导体器件及相关方法

    公开(公告)号：US20080116530A1

    公开(公告)日：2008-05-22

    申请号：US11855413

    申请日：2007-09-14

    申请人： Sang-jin Hyun ,  Si-young Choi ,  In-sang Jeon ,  Sang-bom Kang ,  Hye-min Kim

    发明人： Sang-jin Hyun ,  Si-young Choi ,  In-sang Jeon ,  Sang-bom Kang ,  Hye-min Kim

    IPC分类号： H01L29/94 ,  H01L21/8238

    CPC分类号： H01L21/823828 ,  H01L21/823437 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66621

    摘要： A semiconductor device may include a semiconductor substrate and first and second transistors. The first transistor may have a first gate structure on the semiconductor substrate, and the first gate structure may include a first gate insulating layer between a first gate electrode and the semiconductor substrate. The first gate insulating layer may include first and second dielectric materials with the second dielectric material having a greater dielectric constant than the first dielectric material. Moreover, the first gate electrode may be in contact with the second dielectric material. The second transistor may have a second gate structure on the semiconductor substrate, with the second gate structure including a second gate insulating layer between a second gate electrode and the semiconductor substrate. Related methods are also discussed.

    摘要翻译： 半导体器件可以包括半导体衬底和第一和第二晶体管。 第一晶体管可以在半导体衬底上具有第一栅极结构，并且第一栅极结构可以包括在第一栅极电极和半导体衬底之间的第一栅极绝缘层。 第一栅极绝缘层可以包括第一和第二介电材料，其中第二介电材料具有比第一介电材料更大的介电常数。 此外，第一栅电极可以与第二电介质材料接触。 第二晶体管可以在半导体衬底上具有第二栅极结构，其中第二栅极结构包括在第二栅电极和半导体衬底之间的第二栅极绝缘层。 还讨论了相关方法。