Invention Application
US20100130005A1 METHOD OF FORMING CARBON NANOTUBE ON SEMICONDUCTOR SUBSTRATE, METHOD OF FORMING SEMICONDUCTOR METAL WIRE USING THE SAME, AND METHOD OF FABRICATING INDUCTOR USING THE SAME
有权
在半导体基板上形成碳纳米管的方法，使用其形成半导体金属线的方法以及使用其制造电感器的方法
- Patent Title: METHOD OF FORMING CARBON NANOTUBE ON SEMICONDUCTOR SUBSTRATE, METHOD OF FORMING SEMICONDUCTOR METAL WIRE USING THE SAME, AND METHOD OF FABRICATING INDUCTOR USING THE SAME
- Patent Title (中): 在半导体基板上形成碳纳米管的方法，使用其形成半导体金属线的方法以及使用其制造电感器的方法
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Application No.: US11461086Application Date: 2006-07-31
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Publication No.: US20100130005A1Publication Date: 2010-05-27
- Inventor: Byung Chul Lee , Jeong Oen Lee , Yang Kyu Choi , Jun-Bo Yoon
- Applicant: Byung Chul Lee , Jeong Oen Lee , Yang Kyu Choi , Jun-Bo Yoon
- Assignee: Korea Advanced Institute Of Science & Technology
- Current Assignee: Korea Advanced Institute Of Science & Technology
- Priority: KR10-2005-0080632 20050831
- Main IPC: H01L21/441
- IPC: H01L21/441 ; B28B7/36 ; B05D5/12
Abstract:
A method of fabricating a semiconductor device by filling carbon nanotubes in a recess is disclosed. The method of fabricating the semiconductor device comprises patterning a mold on a substrate, coating carbon nanotubes on an entire surface of the recess and the mold formed by the patterning, filling the carbon nanotubes coated on the an entire surface of the mold in the recess, and removing the mold.
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