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    Non-volatile memory cell and non-volatile memory cell array with minimized influence from neighboring cells
    1.
    发明授权
    Non-volatile memory cell and non-volatile memory cell array with minimized influence from neighboring cells 有权
    非易失性存储单元和非易失性存储单元阵列，其邻近单元的影响最小

    公开(公告)号：US08008706B2

    公开(公告)日：2011-08-30

    申请号：US12048449

    申请日：2008-03-14

    申请人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    发明人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    IPC分类号： H01L29/788

    CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L27/115 ,  H01L27/11517 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/511 ,  H01L29/792 ,  H01L51/0046 ,  H01L51/0048

    摘要： The present invention relates to a non-volatile memory cell and a method of fabricating the same. The non-volatile memory cell according to the present invention comprises a substrate, a first oxide film formed over an active region of the substrate, a source and drain formed within the active region, a charge storage unit formed on the first oxide film, a second oxide film configured to surround the charge storage unit and formed on the first oxide film, and a gate formed to surround the second oxide film. According to the non-volatile memory cell and a cell array including the same in accordance with the present invention, the charge storage unit is fully surrounded by the gate or the gate line, thus a disturbance phenomenon that may occur due to the memory operation of cells formed in other neighboring gate or gate line can be minimized.

    摘要翻译： 本发明涉及一种非易失性存储单元及其制造方法。 根据本发明的非易失性存储单元包括衬底，形成在衬底的有源区上的第一氧化物膜，在有源区内形成的源极和漏极，形成在第一氧化物膜上的电荷存储单元， 第二氧化物膜被构造成围绕电荷存储单元并形成在第一氧化物膜上，以及形成为围绕第二氧化物膜的栅极。 根据本发明的非易失性存储单元和包括该存储单元的单元阵列，电荷存储单元被栅极或栅极线完全包围，因此可能由于存储器操作而发生的干扰现象 在其他相邻栅极或栅极线上形成的电池可以最小化。

    PHASE CHANGE MEMORY DEVICE USING CARBON NANOTUBE
    2.
    发明申请
    PHASE CHANGE MEMORY DEVICE USING CARBON NANOTUBE 审中-公开
    使用碳纳米管的相变存储器件

    公开(公告)号：US20100237318A1

    公开(公告)日：2010-09-23

    申请号：US12795415

    申请日：2010-06-07

    申请人： YANG-KYU CHOI ,  KUK-HWAN KIM

    发明人： YANG-KYU CHOI ,  KUK-HWAN KIM

    IPC分类号： H01L45/00

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/16 ,  Y10S977/70 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/752

    摘要： Provided are a phase change memory device that can operate at low power and improve the scale of integration by reducing a contact area between a phase change material and a bottom electrode, and a method for fabricating the same. The phase change memory comprises a current source electrode, a phase change material layer, a plurality of carbon nanotube electrodes, and an insulation layer. The current source electrode supplies external current to a target. The phase change material layer is disposed to face the current source electrode in side direction. The carbon nanotube electrodes are disposed between the current source electrode and the phase change material layer. The insulation layer is formed outside the carbon nanotube electrodes and functions to reduce the loss of heat generated at the carbon nanotube electrodes.

    摘要翻译： 提供一种相变存储器件及其制造方法，该相变存储器件能够以低功率工作，并且通过减小相变材料和底部电极之间的接触面积来提高积分规模。 相变存储器包括电流源电极，相变材料层，多个碳纳米管电极和绝缘层。 电流源电极向目标提供外部电流。 相变材料层被设置为在侧面方向与电流源电极相对。 碳纳米管电极设置在电流源电极和相变材料层之间。 绝缘层形成在碳纳米管电极的外侧，起减少碳纳米管电极产生的热量的作用。

    Method for manufacturing field effect transistor having channel consisting of silicon fins and silicon body and transistor structure manufactured thereby
    5.
    发明授权
    Method for manufacturing field effect transistor having channel consisting of silicon fins and silicon body and transistor structure manufactured thereby 失效
    制造具有由硅散热片和硅体构成的沟道的场效应晶体管的方法及其制造的晶体管结构

    公开(公告)号：US07419857B2

    公开(公告)日：2008-09-02

    申请号：US11312111

    申请日：2005-12-20

    申请人： Yang-Kyu Choi ,  Hyunjin Lee

    发明人： Yang-Kyu Choi ,  Hyunjin Lee

    IPC分类号： H01L21/84

    CPC分类号： H01L29/7853 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/7854

    摘要： Discloses are a method for manufacturing a field effect transistor comprising a channel consisting of silicon fins and a silicon body, in which the silicon fins have an orientation different from the silicon body, as well as a transistor structure manufactured thereby. The method comprises the steps of: (a) forming a hard mask pattern on a substrate comprising a silicon thin film; (b) anisotropically etching the silicon thin film to a predetermined thickness using the hard mask pattern as a mask so as not only to form silicon fins where a channel is to be formed and a silicon pattern where a source/drain region is to be formed, but also to form a silicon body that connects the silicon fins to each other to form a channel; (c) partially etching the silicon thin film using an active mask so as to isolate the source/drain region and the device from each other; and (d) growing a gate dielectric film around the silicon channel and sequentially depositing a gate material and a gate mask on the resulting structure, followed by forming a gate region.

    摘要翻译： 公开了一种制造场效应晶体管的方法，该场效应晶体管包括由硅散热片和硅体组成的沟道，其中硅散热片具有与硅体不同的取向，以及由此制造的晶体管结构。 该方法包括以下步骤：（a）在包括硅薄膜的衬底上形成硬掩模图案; （b）使用硬掩模图案作为掩模将硅薄膜各向异性地蚀刻到预定厚度，以便不仅形成要形成沟道的硅散热片和要形成源/漏区的硅图案 而且还形成将硅翅片彼此连接以形成通道的硅体; （c）使用有源掩模部分地蚀刻硅薄膜，以将源极/漏极区域和器件彼此隔离; 以及（d）在硅沟道周围生长栅介质膜，并在所得结构上依次沉积栅极材料和栅极掩模，随后形成栅极区域。

    CMOS image sensor
    9.
    发明申请
    CMOS image sensor 审中-公开
    CMOS图像传感器

    公开(公告)号：US20060289911A1

    公开(公告)日：2006-12-28

    申请号：US11472389

    申请日：2006-06-22

    申请人： Sang-Jun Lee ,  Yang-Kyu Choi ,  Dong-Yoon Jang

    发明人： Sang-Jun Lee ,  Yang-Kyu Choi ,  Dong-Yoon Jang

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

    摘要： Disclosed is a CMOS image sensor, comprising a photodiode formed in a substrate, a floating diffusion region formed in the substrate in a manner such that it is distanced from the photodiode surrounds the photodiode and a transfer gate formed in a manner such that it is distanced from the photodiode and the floating diffusion region and formed in a boundary area between the photodiode and the floating diffusion region, thereby overlapping the photodiode and the floating diffusion region.

    摘要翻译： 公开了一种CMOS图像传感器，其包括形成在衬底中的光电二极管，以与光电二极管相隔的方式形成在衬底中的浮动扩散区域包围光电二极管，并且以使其远离的方式形成传输门 从光电二极管和浮动扩散区域形成在光电二极管和浮动扩散区域之间的边界区域中，从而与光电二极管和浮动扩散区域重叠。