Invention Application
- Patent Title: SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS
- Patent Title (中): 用于含碳膜的硅选择干燥剂
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Application No.: US12551180Application Date: 2009-08-31
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Publication No.: US20110053380A1Publication Date: 2011-03-03
- Inventor: Kedar Sapre , Jing Tang , Linlin Wang , Abhijit Basu Mallick , Nitin Ingle
- Applicant: Kedar Sapre , Jing Tang , Linlin Wang , Abhijit Basu Mallick , Nitin Ingle
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/3065
- IPC: H01L21/3065
Abstract:
A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.
Public/Granted literature
- US08211808B2 Silicon-selective dry etch for carbon-containing films Public/Granted day:2012-07-03
Information query
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